P-Type SOI Wafers with Boron Doping
Silicon-on-Insulator wafers with device layer boron-doped p-type for low-power CMOS and RF-SOI. Buried oxide layer with handle wafer. Complex doped silicon structure in 3818.00.00.
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Import Tips & Compliance
• SOI structure diagram required for complex valuation
• Handle/BOX/device layer specs must match invoice
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