3818.00.00/P-Type SOI Wafers with Boron Doping/Canada

P-Type SOI Wafers with Boron Doping from Canada

Silicon-on-Insulator wafers with device layer boron-doped p-type for low-power CMOS and RF-SOI. Buried oxide layer with handle wafer. Complex doped silicon structure in 3818.00.00.

Duty Rate — Canada → United States

Rate breakdown

9903.05.860%Universal product exemption (U.S. note 52(b))

Calculate with your customs value Verify classification with AI

Import Tips

• SOI structure diagram required for complex valuation

• Handle/BOX/device layer specs must match invoice