3818.00.00/P-Type SOI Wafers with Boron Doping/Canada

P-Type SOI Wafers with Boron Doping from Canada

Silicon-on-Insulator wafers with device layer boron-doped p-type for low-power CMOS and RF-SOI. Buried oxide layer with handle wafer. Complex doped silicon structure in 3818.00.00.

Duty Rate — Canada → United States

Rate breakdown

9903.05.860%Articles provided for in subdivision (b) of U.S. note 52 to this subchapter

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Import Tips

• SOI structure diagram required for complex valuation

• Handle/BOX/device layer specs must match invoice