Chemical elements doped for use in electronics, in the form of discs, wafers or similar forms; chemical compounds doped for use in electronics
Chemical elements doped for use in electronics, in the form of discs, wafers or similar forms; chemical compounds doped for use in electronics
Duty Rate (from China)
Effective with respect to entries on or after January 1, 2025, articles the product of China, as provided for in subdivision (f) of U.S. note 31 to this subchapter
Articles the product of any country, as provided for in subdivision (aa)(ii) of U.S. note 2 to this subchapter
Subheadings
Products classified under HTS 3818.00.00
Arsenic-Doped Gallium Arsenide Wafers
Gallium arsenide substrates doped with arsenic for high-frequency RF and optoelectronic devices like LEDs. These compound semiconductors are in wafer/disc form for epitaxial growth. Doping qualifies them under HTS 3818.00.00 for electronics use.
Boron-Doped Diamond Wafers
CVD diamond discs heavily boron-doped (p++) for high-power electronics and quantum devices. Extreme semiconductor material in wafer form. HTS 3818.00.00 for doped electronic compounds.
Arsenic-Doped Indium Arsenide Wafers
InAs wafers doped for high-electron-mobility transistors in terahertz electronics. Compound semiconductor discs for advanced photonics. HTS 3818.00.00 applies.
Boron-Doped Silicon Wafers
Silicon wafers doped with boron to create p-type semiconductors, typically 300mm in diameter for semiconductor fabrication. These are chemical elements (silicon) intentionally doped for electronic applications in integrated circuit production. Classified under HTS 3818.00.00 due to their disc/wafer form and doping for electronics.
Phosphorus-Doped N-Type Silicon Wafers
High-purity silicon wafers doped with phosphorus for n-type conductivity, used in solar cells and CMOS manufacturing. The doping alters electrical properties specifically for electronic circuitry. HTS 3818.00.00 applies as doped chemical elements in wafer form.
Antimony-Doped Silicon Wafers
Silicon wafers with antimony doping for high-temperature n-type applications in power electronics. Provided in standard 200mm disc format for device fabrication. Falls under 3818.00.00 as doped chemical element for electronics.
Indium-Doped Germanium Wafers
Germanium discs doped with indium for p-type infrared detectors and fiber optic transceivers. Used in wafer form for specialized electronic applications. HTS 3818.00.00 covers these doped compound semiconductors.
Nitrogen-Doped Silicon Carbide Wafers
4H-SiC wafers doped with nitrogen for high-voltage power electronics and EV inverters. 150mm discs specifically engineered for electronic performance. Classified in 3818.00.00 as doped chemical compounds.
Aluminum-Doped Zinc Oxide Sputtering Targets
Disc-shaped AZO targets doped for transparent conductive oxide films in touchscreens and solar cells. Chemical compound doped specifically for thin-film electronics deposition. HTS 3818.00.00 due to disc form and electronic doping.
Magnesium-Doped Gallium Nitride Wafers
GaN epi-wafers on sapphire with magnesium p-doping for blue LEDs and power HEMTs. Compound semiconductor wafers for optoelectronics. Doping for electronics places under 3818.00.00.
Phosphorus-Doped Indium Phosphide Wafers
InP wafers n-type doped with phosphorus for telecom lasers and high-speed electronics. 4-inch discs for photonic integrated circuits. Classified 3818.00.00 as doped electronic compounds.
Double-Sided Polished Boron-Doped Silicon Wafers
DSP prime silicon wafers p-type boron-doped, mirror polished both sides for MEMS and SOI processing. Standard electronic substrate in disc form. 3818.00.00 for polished doped wafers.
Epitaxial Ready Nitrogen-Doped Silicon Carbide Wafers
Epi-ready 4H-SiC n+ wafers nitrogen-doped for homoepitaxy in Schottky diodes and MOSFETs. Prepped surface for immediate epitaxial growth. Doped compound under 3818.00.00.
P-Type SOI Wafers with Boron Doping
Silicon-on-Insulator wafers with device layer boron-doped p-type for low-power CMOS and RF-SOI. Buried oxide layer with handle wafer. Complex doped silicon structure in 3818.00.00.
Tellurium-Doped Cadmium Telluride Wafers
CdTe substrates tellurium-doped for thin-film solar cells and radiation detectors. Infrared semiconductor wafers in disc form. Doped for electronics under 3818.00.00.