Gallium arsenide wafers, doped
Chemical elements doped for use in electronics, in the form of discs, wafers or similar forms; chemical compounds doped for use in electronics > Gallium arsenide wafers, doped
Duty Rate (from China)
Effective with respect to entries on or after January 1, 2025, articles the product of China, as provided for in subdivision (f) of U.S. note 31 to this subchapter
Articles the product of any country, as provided for in subdivision (aa)(ii) of U.S. note 2 to this subchapter
Products classified under HTS 3818.00.00.10
2-Inch Doped Gallium Arsenide Wafer
A 2-inch diameter silicon wafer made from gallium arsenide (GaAs), doped with impurities like silicon or tellurium to enhance electrical conductivity for semiconductor applications. These wafers are polished to atomic-level flatness and used primarily in high-frequency electronics such as RF amplifiers and microwave devices. Classified under HTS 3818.00.0010 as chemical compounds doped for use in electronics in wafer form.
4-Inch N-Type Doped GaAs Wafer
A 4-inch GaAs wafer doped n-type with silicon impurities, designed for epitaxial growth in high-electron-mobility transistors (HEMTs). Used in satellite communications and 5G base stations due to superior electron mobility. Falls under HTS 3818.00.0010 for doped gallium arsenide wafers in disc form for electronics.
6-Inch P-Type Doped Gallium Arsenide Wafer
High-purity 6-inch GaAs wafer doped p-type with zinc or beryllium for solar cell production and optoelectronics. Features low defect density for high-efficiency photovoltaic applications in space tech. HTS 3818.00.0010 covers these doped semiconductor wafers.
Undoped GaAs Wafer with Epitaxial Doping Layer
Semi-insulating undoped GaAs substrate wafer with a thin epitaxial doped layer grown on surface for MMIC production. The doping is integral for electronic functionality in monolithic microwave ICs. Still classified under HTS 3818.00.0010 as doped GaAs wafers.
8-Inch Doped GaAs Wafer for Photonics
Large 8-inch GaAs wafer doped for photonic integrated circuits, enabling high-speed data transmission in telecom. Features low dislocation density for VCSEL array fabrication. Covered by HTS 3818.00.0010 for doped semiconductor wafers.
Epi-Ready Doped GaAs Wafer 100mm
100mm epi-ready GaAs wafer doped with controlled carrier concentration for immediate MBE growth. Used in gallium nitride overgrowth for power electronics. Falls under HTS 3818.00.0010 as doped disc-form electronics material.
3-Inch High-Mobility Electron GaAs Wafer
3-inch diameter GaAs wafer doped for high electron mobility, used in pseudomorphic HEMT structures for low-noise amplifiers. Polished on both sides with specific epi-ready surface finish. HTS 3818.00.0010 applies to these doped electronic wafers.
GaAs Wafer Doped for Solar Cell Production
Doped GaAs wafer optimized for multi-junction solar cells used in satellites, with precise dopant profile for high efficiency (>30%). Thin-film ready with back surface field doping. HTS 3818.00.0010 classification for electronics-doped compounds.