GaAs Wafer Doped for Solar Cell Production
Doped GaAs wafer optimized for multi-junction solar cells used in satellites, with precise dopant profile for high efficiency (>30%). Thin-film ready with back surface field doping. HTS 3818.00.0010 classification for electronics-doped compounds.
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Alternative Classifications
This product could be classified differently depending on its characteristics or intended use.
If finished photovoltaic cells
Completed solar cells classified as photosensitive devices.
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Related Products under HTS 3818.00.00.10
2-Inch Doped Gallium Arsenide Wafer
A 2-inch diameter silicon wafer made from gallium arsenide (GaAs), doped with impurities like silicon or tellurium to enhance electrical conductivity for semiconductor applications. These wafers are polished to atomic-level flatness and used primarily in high-frequency electronics such as RF amplifiers and microwave devices. Classified under HTS 3818.00.0010 as chemical compounds doped for use in electronics in wafer form.
4-Inch N-Type Doped GaAs Wafer
A 4-inch GaAs wafer doped n-type with silicon impurities, designed for epitaxial growth in high-electron-mobility transistors (HEMTs). Used in satellite communications and 5G base stations due to superior electron mobility. Falls under HTS 3818.00.0010 for doped gallium arsenide wafers in disc form for electronics.
6-Inch P-Type Doped Gallium Arsenide Wafer
High-purity 6-inch GaAs wafer doped p-type with zinc or beryllium for solar cell production and optoelectronics. Features low defect density for high-efficiency photovoltaic applications in space tech. HTS 3818.00.0010 covers these doped semiconductor wafers.
Undoped GaAs Wafer with Epitaxial Doping Layer
Semi-insulating undoped GaAs substrate wafer with a thin epitaxial doped layer grown on surface for MMIC production. The doping is integral for electronic functionality in monolithic microwave ICs. Still classified under HTS 3818.00.0010 as doped GaAs wafers.
8-Inch Doped GaAs Wafer for Photonics
Large 8-inch GaAs wafer doped for photonic integrated circuits, enabling high-speed data transmission in telecom. Features low dislocation density for VCSEL array fabrication. Covered by HTS 3818.00.0010 for doped semiconductor wafers.
Epi-Ready Doped GaAs Wafer 100mm
100mm epi-ready GaAs wafer doped with controlled carrier concentration for immediate MBE growth. Used in gallium nitride overgrowth for power electronics. Falls under HTS 3818.00.0010 as doped disc-form electronics material.