3818.00.00.10/GaAs Wafer Doped for Solar Cell Production/Japan

GaAs Wafer Doped for Solar Cell Production from Japan

Doped GaAs wafer optimized for multi-junction solar cells used in satellites, with precise dopant profile for high efficiency (>30%). Thin-film ready with back surface field doping. HTS 3818.00.0010 classification for electronics-doped compounds.

Duty Rate — Japan → United States

0%

Rate breakdown

9903.03.030%Articles the product of any country, as provided for in subdivision (aa)(ii) of U.S. note 2 to this subchapter
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Import Tips

• Include AM0 efficiency test data if available for valuation purposes

• Comply with NASA/ESA material specs in documentation for credibility