3818.00.00.10/GaAs Wafer Doped for Solar Cell Production/Mexico

GaAs Wafer Doped for Solar Cell Production from Mexico

Doped GaAs wafer optimized for multi-junction solar cells used in satellites, with precise dopant profile for high efficiency (>30%). Thin-film ready with back surface field doping. HTS 3818.00.0010 classification for electronics-doped compounds.

Duty Rate — Mexico → United States

0%

Rate breakdown

9903.03.030%Articles the product of any country, as provided for in subdivision (aa)(ii) of U.S. note 2 to this subchapter
Calculate with your customs valueVerify classification with AI

Import Tips

• Include AM0 efficiency test data if available for valuation purposes

• Comply with NASA/ESA material specs in documentation for credibility

GaAs Wafer Doped for Solar Cell Production from Mexico — Import Duty Rate | HTS 3818.00.00.10