6-Inch P-Type Doped Gallium Arsenide Wafer
High-purity 6-inch GaAs wafer doped p-type with zinc or beryllium for solar cell production and optoelectronics. Features low defect density for high-efficiency photovoltaic applications in space tech. HTS 3818.00.0010 covers these doped semiconductor wafers.
Import Duty Rates by Country of Origin
Alternative Classifications
This product could be classified differently depending on its characteristics or intended use.
If for light-emitting diodes (LEDs)
Wafers specifically for LED fabrication classified as photosensitive semiconductor devices.
If elemental arsenic only
Pure elemental forms exclude compound wafers like GaAs.
If other doped discs/wafers not GaAs
Non-GaAs doped semiconductor materials use residual provisions.
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Import Tips & Compliance
• Include resistivity measurements (e.g
• 1-10 ohm-cm) to validate doping type and level
• Watch for anti-dumping duties if sourced from certain countries; check Commerce Dept. scopes
• Use cleanroom packaging to prevent contamination claims during customs inspection
Related Products under HTS 3818.00.00.10
2-Inch Doped Gallium Arsenide Wafer
A 2-inch diameter silicon wafer made from gallium arsenide (GaAs), doped with impurities like silicon or tellurium to enhance electrical conductivity for semiconductor applications. These wafers are polished to atomic-level flatness and used primarily in high-frequency electronics such as RF amplifiers and microwave devices. Classified under HTS 3818.00.0010 as chemical compounds doped for use in electronics in wafer form.
4-Inch N-Type Doped GaAs Wafer
A 4-inch GaAs wafer doped n-type with silicon impurities, designed for epitaxial growth in high-electron-mobility transistors (HEMTs). Used in satellite communications and 5G base stations due to superior electron mobility. Falls under HTS 3818.00.0010 for doped gallium arsenide wafers in disc form for electronics.
Undoped GaAs Wafer with Epitaxial Doping Layer
Semi-insulating undoped GaAs substrate wafer with a thin epitaxial doped layer grown on surface for MMIC production. The doping is integral for electronic functionality in monolithic microwave ICs. Still classified under HTS 3818.00.0010 as doped GaAs wafers.
8-Inch Doped GaAs Wafer for Photonics
Large 8-inch GaAs wafer doped for photonic integrated circuits, enabling high-speed data transmission in telecom. Features low dislocation density for VCSEL array fabrication. Covered by HTS 3818.00.0010 for doped semiconductor wafers.
Epi-Ready Doped GaAs Wafer 100mm
100mm epi-ready GaAs wafer doped with controlled carrier concentration for immediate MBE growth. Used in gallium nitride overgrowth for power electronics. Falls under HTS 3818.00.0010 as doped disc-form electronics material.
3-Inch High-Mobility Electron GaAs Wafer
3-inch diameter GaAs wafer doped for high electron mobility, used in pseudomorphic HEMT structures for low-noise amplifiers. Polished on both sides with specific epi-ready surface finish. HTS 3818.00.0010 applies to these doped electronic wafers.