6-Inch P-Type Doped Gallium Arsenide Wafer from Japan
High-purity 6-inch GaAs wafer doped p-type with zinc or beryllium for solar cell production and optoelectronics. Features low defect density for high-efficiency photovoltaic applications in space tech. HTS 3818.00.0010 covers these doped semiconductor wafers.
Duty Rate — Japan → United States
0%
Rate breakdown
9903.05.860%Universal product exemption (U.S. note 52(b))
Import Tips
• Include resistivity measurements (e.g
• 1-10 ohm-cm) to validate doping type and level
• Watch for anti-dumping duties if sourced from certain countries; check Commerce Dept. scopes
• Use cleanroom packaging to prevent contamination claims during customs inspection