3818.00.00.10/6-Inch P-Type Doped Gallium Arsenide Wafer/Japan

6-Inch P-Type Doped Gallium Arsenide Wafer from Japan

High-purity 6-inch GaAs wafer doped p-type with zinc or beryllium for solar cell production and optoelectronics. Features low defect density for high-efficiency photovoltaic applications in space tech. HTS 3818.00.0010 covers these doped semiconductor wafers.

Duty Rate — Japan → United States

0%

Rate breakdown

9903.03.030%Articles the product of any country, as provided for in subdivision (aa)(ii) of U.S. note 2 to this subchapter
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Import Tips

• Include resistivity measurements (e.g

• 1-10 ohm-cm) to validate doping type and level

• Watch for anti-dumping duties if sourced from certain countries; check Commerce Dept. scopes

• Use cleanroom packaging to prevent contamination claims during customs inspection

6-Inch P-Type Doped Gallium Arsenide Wafer from Japan — Import Duty Rate | HTS 3818.00.00.10