GaAs Wafer Doped for Solar Cell Production from Germany
Doped GaAs wafer optimized for multi-junction solar cells used in satellites, with precise dopant profile for high efficiency (>30%). Thin-film ready with back surface field doping. HTS 3818.00.0010 classification for electronics-doped compounds.
Duty Rate — Germany → United States
0%
Rate breakdown
9903.05.860%Articles provided for in subdivision (b) of U.S. note 52 to this subchapter
Import Tips
• Include AM0 efficiency test data if available for valuation purposes
• Comply with NASA/ESA material specs in documentation for credibility