Arsenic-Doped Gallium Arsenide Wafers
Gallium arsenide substrates doped with arsenic for high-frequency RF and optoelectronic devices like LEDs. These compound semiconductors are in wafer/disc form for epitaxial growth. Doping qualifies them under HTS 3818.00.00 for electronics use.
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More Specific Codes
This product may fall under a more specific subheading:
Alternative Classifications
This product could be classified differently depending on its characteristics or intended use.
If undoped gallium arsenide
Pure GaAs compounds without electronic doping go to inorganic chemicals.
If fabricated into diodes/LEDs
Completed semiconductor devices classify under Chapter 85.
If epitaxial growth chemicals
Dopant precursors as mixtures may be chemical preparations.
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Import Tips & Compliance
• Declare arsenic content per EPA TSCA; special handling for toxic dopants required
• Use ESD-safe packaging; static damage common in air shipments
• Avoid classifying as scrap; provide fab-grade purity certificates
Related Products under HTS 3818.00.00
Boron-Doped Diamond Wafers
CVD diamond discs heavily boron-doped (p++) for high-power electronics and quantum devices. Extreme semiconductor material in wafer form. HTS 3818.00.00 for doped electronic compounds.
Arsenic-Doped Indium Arsenide Wafers
InAs wafers doped for high-electron-mobility transistors in terahertz electronics. Compound semiconductor discs for advanced photonics. HTS 3818.00.00 applies.
Boron-Doped Silicon Wafers
Silicon wafers doped with boron to create p-type semiconductors, typically 300mm in diameter for semiconductor fabrication. These are chemical elements (silicon) intentionally doped for electronic applications in integrated circuit production. Classified under HTS 3818.00.00 due to their disc/wafer form and doping for electronics.
Phosphorus-Doped N-Type Silicon Wafers
High-purity silicon wafers doped with phosphorus for n-type conductivity, used in solar cells and CMOS manufacturing. The doping alters electrical properties specifically for electronic circuitry. HTS 3818.00.00 applies as doped chemical elements in wafer form.
Antimony-Doped Silicon Wafers
Silicon wafers with antimony doping for high-temperature n-type applications in power electronics. Provided in standard 200mm disc format for device fabrication. Falls under 3818.00.00 as doped chemical element for electronics.
Indium-Doped Germanium Wafers
Germanium discs doped with indium for p-type infrared detectors and fiber optic transceivers. Used in wafer form for specialized electronic applications. HTS 3818.00.00 covers these doped compound semiconductors.