Arsenic-Doped Gallium Arsenide Wafers from Mexico
Gallium arsenide substrates doped with arsenic for high-frequency RF and optoelectronic devices like LEDs. These compound semiconductors are in wafer/disc form for epitaxial growth. Doping qualifies them under HTS 3818.00.00 for electronics use.
Duty Rate — Mexico → United States
0%
Rate breakdown
9903.05.860%Universal product exemption (U.S. note 52(b))
Import Tips
• Declare arsenic content per EPA TSCA; special handling for toxic dopants required
• Use ESD-safe packaging; static damage common in air shipments
• Avoid classifying as scrap; provide fab-grade purity certificates