Arsenic-Doped Gallium Arsenide Wafers from Japan
Gallium arsenide substrates doped with arsenic for high-frequency RF and optoelectronic devices like LEDs. These compound semiconductors are in wafer/disc form for epitaxial growth. Doping qualifies them under HTS 3818.00.00 for electronics use.
Duty Rate — Japan → United States
0%
Rate breakdown
9903.05.860%Articles provided for in subdivision (b) of U.S. note 52 to this subchapter
Import Tips
• Declare arsenic content per EPA TSCA; special handling for toxic dopants required
• Use ESD-safe packaging; static damage common in air shipments
• Avoid classifying as scrap; provide fab-grade purity certificates