P-Type SOI Wafers with Boron Doping from China
Silicon-on-Insulator wafers with device layer boron-doped p-type for low-power CMOS and RF-SOI. Buried oxide layer with handle wafer. Complex doped silicon structure in 3818.00.00.
Duty Rate — China → United States
50%
Rate breakdown
9903.91.0550%Effective with respect to entries on or after January 1, 2025, articles the product of China, as provided for in subdivision (f) of U.S. note 31 to this subchapter
9903.05.860%Universal product exemption (U.S. note 52(b))
Import Tips
• SOI structure diagram required for complex valuation
• Handle/BOX/device layer specs must match invoice