3818.00.00/P-Type SOI Wafers with Boron Doping/Germany

P-Type SOI Wafers with Boron Doping from Germany

Silicon-on-Insulator wafers with device layer boron-doped p-type for low-power CMOS and RF-SOI. Buried oxide layer with handle wafer. Complex doped silicon structure in 3818.00.00.

Duty Rate — Germany → United States

0%

Rate breakdown

9903.03.030%Articles the product of any country, as provided for in subdivision (aa)(ii) of U.S. note 2 to this subchapter
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Import Tips

• SOI structure diagram required for complex valuation

• Handle/BOX/device layer specs must match invoice