2N7000 N-Channel MOSFET Transistor
2N7000 enhancement-mode MOSFET with 400mW dissipation for low-power switching in logic level converters and battery circuits. Classifies under HTS 8541.21.00 as low-dissipation field-effect transistor.
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More Specific Codes
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Alternative Classifications
This product could be classified differently depending on its characteristics or intended use.
If power MOSFETs like IRF540
FETs exceeding 1W dissipation classify as other transistors.
If bare MOSFET die without encapsulation
Unpackaged semiconductor elements are parts thereof.
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Import Tips & Compliance
• MOSFET gate threshold specs must match datasheet for low-power verification
• Separate FETs from IGBTs which often exceed dissipation limits
• Anti-static reel packaging required; declare ESD protection class
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