Unmounted chips, dice and wafers
Semiconductor devices (for example, diodes, transistors, semiconductor-based transducers); photosensitive semiconductor devices, including photovoltaic cells whether or not assembled in modules or made up into panels; light-emitting diodes (LED), whether or not assembled with other light-emitting diodes (LED); mounted piezo-electric crystals; parts thereof: > Transistors, other than photosensitive transistors: > With a dissipation rate of less than 1 W > Unmounted chips, dice and wafers
Duty Rate (from China)
Effective with respect to entries on or after January 1, 2025, articles the product of China, as provided for in subdivision (f) of U.S. note 31 to this subchapter
Articles the product of any country, as provided for in subdivision (aa)(ii) of U.S. note 2 to this subchapter
Products classified under HTS 8541.21.00.40
Silicon NPN Power Transistor Wafer
Thin silicon wafers containing thousands of unmounted NPN bipolar junction transistor dice, designed for dissipation rates under 1W, used in consumer electronics like smartphones and amplifiers. Classified under HTS 8541.21.00.40 as unmounted chips, dice, and wafers of transistors other than photosensitive types with dissipation less than 1W.
MOSFET Driver Wafer
Silicon wafer containing unmounted MOSFET driver transistor chips for low-power switching applications in power management ICs, with dissipation rates below 1W. Falls under HTS 8541.21.00.40 as unmounted transistor wafers other than photosensitive.
SiGe HBT Transistor Die
Silicon-Germanium Heterojunction Bipolar Transistor dice for high-frequency applications in 5G base stations, unmounted with <1W dissipation. Classified under HTS 8541.21.00.40 as non-photosensitive transistor chips.
Automotive Grade MOSFET Wafer
Unmounted MOSFET wafers AEC-Q101 qualified for automotive applications like ECUs and sensors, dissipation under 1W per die. HTS 8541.21.00.40 for unmounted low-power transistor wafers.
Darlington Transistor Chip Array Wafer
Silicon wafer with unmounted Darlington transistor pair chips for high-current switching applications under 1W total dissipation. Covered by HTS 8541.21.00.40 as unmounted transistor dice.
GaAs RF Transistor Die
Gallium Arsenide (GaAs) transistor dice optimized for RF applications with dissipation under 1W, used in wireless communication devices like cell phones and WiFi modules. HTS 8541.21.00.40 applies to these unmounted chips for non-photosensitive transistors.
Low-Noise Amplifier Transistor Chip
Unmounted silicon chips of low-noise transistors designed for audio and RF preamplifiers with dissipation under 1W, used in hearing aids and professional audio equipment. Classified in HTS 8541.21.00.40 for unmounted transistor dice.
Bipolar Junction Transistor Wafer for IoT Devices
8-inch silicon wafer with unmounted BJT chips optimized for Internet of Things sensors and controllers, dissipation <1W. HTS 8541.21.00.40 covers these unmounted semiconductor transistor wafers.