With a dissipation rate of less than 1 W
Semiconductor devices (for example, diodes, transistors, semiconductor-based transducers); photosensitive semiconductor devices, including photovoltaic cells whether or not assembled in modules or made up into panels; light-emitting diodes (LED), whether or not assembled with other light-emitting diodes (LED); mounted piezo-electric crystals; parts thereof: > Transistors, other than photosensitive transistors: > With a dissipation rate of less than 1 W
Duty Rate (from China)
Effective with respect to entries on or after January 1, 2025, articles the product of China, as provided for in subdivision (f) of U.S. note 31 to this subchapter
Articles the product of any country, as provided for in subdivision (aa)(ii) of U.S. note 2 to this subchapter
Subheadings
Products classified under HTS 8541.21.00
BFR93A NPN RF Transistor
BFR93A UHF transistor (200mW) for wireless modules and cable TV amplifiers. Low-power RF classification HTS 8541.21.00.
MPS2222 NPN TO-18 Metal Can Transistor
Military-grade MPS2222 in hermetic TO-18 can (625mW) for avionics and harsh environments. Metal package but low-dissipation keeps HTS 8541.21.00 status.
2N3904 NPN Switching Transistor
The 2N3904 is a low-power NPN transistor rated at 625mW dissipation, ideal for signal amplification and low-speed switching in audio circuits and hobbyist projects. Classified under HTS 8541.21.00 for transistors under 1W, excluding photosensitive types. Widely used in Arduino boards and small signal applications.
BC557 PNP Complementary Transistor
BC557 PNP transistor pairs with NPN types for push-pull audio amplifiers, with 500mW dissipation suitable for low-power signal processing. HTS 8541.21.00 applies to these non-photosensitive, low-dissipation transistors used in portable devices.
MMBT3906 PNP Surface Mount Transistor
Surface-mount MMBT3906 PNP transistor (200mW dissipation) for compact SMD PCB designs in smartphones and wearables. HTS 8541.21.00 covers these low-power, non-photosensitive transistors in SOT-23 packages.
2N7000 N-Channel MOSFET Transistor
2N7000 enhancement-mode MOSFET with 400mW dissipation for low-power switching in logic level converters and battery circuits. Classifies under HTS 8541.21.00 as low-dissipation field-effect transistor.
BS170 N-Channel FET Transistor
BS170 N-channel FET rated at 350mW for RF amplifiers and switching in amateur radio equipment. HTS 8541.21.00 for low-power non-photosensitive transistors including field-effect types.
PN2222A NPN General Purpose Transistor
PN2222A TO-92 packaged NPN transistor (625mW) for through-hole prototyping and legacy equipment repair. Standard low-dissipation classification under HTS 8541.21.00.
J310 N-Channel JFET Transistor
J310 JFET for RF preamplifiers with 350mW dissipation in VHF/UHF receivers. HTS 8541.21.00 includes junction field-effect transistors under 1W.
MJE340 NPN High Voltage Transistor
MJE340 handles 500mW at high voltages for horizontal deflection in CRT displays. Low-dissipation despite voltage rating keeps it in HTS 8541.21.00.
C945 NPN Silicon Transistor
C945 low-noise NPN for audio preamplifiers (400mW dissipation) in hi-fi equipment. Asian-sourced general purpose transistor under HTS 8541.21.00.
KSP42 NPN Darlington Transistor
KSP42 high-gain Darlington pair (625mW) for sensor interfaces and relay drivers. Counts as single transistor unit under HTS 8541.21.00 dissipation limit.
SS8050 NPN Plastic Encapsulated Transistor
SS8050 TO-92 plastic NPN (900mW still <1W) for driver stages in switching power supplies. Standard low-power discrete under HTS 8541.21.00.
BC547 NPN Bipolar Junction Transistor
The BC547 is a general-purpose NPN bipolar junction transistor with a maximum power dissipation of 500mW (<1W), used in switching and amplification circuits. It falls under HTS 8541.21.00 as a non-photosensitive transistor with low dissipation rate, distinct from power transistors exceeding 1W. Commonly found in consumer electronics like radios and sensors.
S8050 NPN Medium Power Transistor
S8050 NPN transistor handles 625mW dissipation for audio output stages and relay drivers in consumer electronics. Fits HTS 8541.21.00 as a low-dissipation discrete transistor, not exceeding 1W threshold.