Other
Semiconductor devices (for example, diodes, transistors, semiconductor-based transducers); photosensitive semiconductor devices, including photovoltaic cells whether or not assembled in modules or made up into panels; light-emitting diodes (LED), whether or not assembled with other light-emitting diodes (LED); mounted piezo-electric crystals; parts thereof: > Transistors, other than photosensitive transistors: > With a dissipation rate of less than 1 W > Other: > Other
Duty Rate (from China)
Effective with respect to entries on or after January 1, 2025, articles the product of China, as provided for in subdivision (f) of U.S. note 31 to this subchapter
Articles the product of any country, as provided for in subdivision (aa)(ii) of U.S. note 2 to this subchapter
Products classified under HTS 8541.21.00.95
BC547 NPN Bipolar Junction Transistor
The BC547 is a general-purpose NPN bipolar junction transistor used in amplification and switching circuits with a power dissipation rating below 1W (typically 500mW). It falls under HTS 8541.21.00.95 as a non-photosensitive transistor with dissipation less than 1W, distinct from power transistors. Commonly found in consumer electronics like radios and sensors.
2N3904 NPN Switching Transistor
The 2N3904 is a low-power NPN transistor ideal for general-purpose switching and signal amplification in hobbyist and commercial electronics, with maximum dissipation of 625mW. Classified under HTS 8541.21.00.95 for transistors under 1W excluding photosensitive types. Widely used in Arduino projects and small signal circuits.
BF199 NPN RF Transistor
The BF199 is a silicon NPN transistor optimized for RF amplification in VHF/UHF applications with dissipation under 1W. It qualifies for HTS 8541.21.00.95 as a low-power, non-photosensitive transistor. Used in radio receivers and wireless communication modules.
PN2222A NPN General Purpose Transistor
PN2222A is a versatile NPN transistor for low to medium current switching up to 600mA with 625mW dissipation, perfect for logic level driving. Falls under HTS 8541.21.00.95 for small signal transistors under 1W. Essential component in DIY electronics and IoT devices.
MMBT3904 Surface Mount NPN Transistor
The MMBT3904 is the SOT-23 SMD version of the 2N3904, offering the same <1W dissipation for space-constrained PCB designs in smartphones and wearables. Classified HTS 8541.21.00.95 as low-power discrete transistor. Ideal for high-volume surface mount assembly.
JFET 2N3819 N-Channel Transistor
The 2N3819 is a high-frequency N-channel JFET transistor for RF preamplifiers and choppers with dissipation under 1W. Qualifies for HTS 8541.21.00.95 as non-photosensitive, low-power field-effect transistor. Used in audio and instrumentation amplifiers.
S8050 NPN Medium Power Transistor
S8050 is a TO-92 plastic package NPN transistor handling 700mA with 625mW dissipation for relay drivers and LED control. Fits HTS 8541.21.00.95 criteria for <1W transistors. Popular in power supplies and motor controls.
BC337-40 NPN Audio Transistor
BC337-40 offers medium current (800mA) with hFE=400-625 for audio output stages and high gain applications, dissipation 625mW max. HTS 8541.21.00.95 for low-power gain transistors. Used in preamplifiers and small audio amplifiers.
TIP31C NPN Power Transistor (Low Power Variant)
TIP31C variant configured for <1W operation in linear voltage regulators and current sources. Despite power transistor appearance, electrical specs qualify for HTS 8541.21.00.95. Used where heat sinking limits power to under 1W.
JAN2N2222A Military Grade Transistor
JAN2N2222A is the MIL-SPEC version of 2N2222 with extended temperature range (-65°C to 200°C) and guaranteed parameters for avionics/defense. Still <1W dissipation qualifies HTS 8541.21.00.95. Meets QPL (Qualified Parts List) standards.
SiC Small Signal Transistor
Silicon Carbide (SiC) NPN transistor for high-temperature switching applications up to 225°C with <1W dissipation. HTS 8541.21.00.95 applies to low-power wide bandgap semiconductors. Used in automotive electronics and harsh environments.
Low Noise BC549 NPN Transistor
BC549C variant with ultra-low noise for audio preamplifiers and sensor interfaces, 500mW dissipation. Specifically engineered for minimal 1/f noise in HTS 8541.21.00.95 category. Ideal for precision measurement equipment.
Darlington 2SD882 NPN Transistor
2SD882 is a high current Darlington transistor pair (hFE >2000) in single package for <1W motor drivers and solenoid control. Composite transistor structure qualifies HTS 8541.21.00.95. Provides high gain from low input current.
GaN Small Signal HEMT Transistor
Gallium Nitride (GaN) High Electron Mobility Transistor for microwave frequencies with <1W dissipation in 5G base stations and radar. Advanced compound semiconductor under HTS 8541.21.00.95. Offers superior power density vs silicon.
Audio Output TIP42C PNP Complementary Transistor
TIP42C PNP complementary to TIP31C for push-pull audio output stages, operated at <1W with proper heatsinking. Paired with NPN for balanced Class AB amplifiers under HTS 8541.21.00.95. Professional audio power requirements.