GaN Small Signal HEMT Transistor
Gallium Nitride (GaN) High Electron Mobility Transistor for microwave frequencies with <1W dissipation in 5G base stations and radar. Advanced compound semiconductor under HTS 8541.21.00.95. Offers superior power density vs silicon.
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Alternative Classifications
This product could be classified differently depending on its characteristics or intended use.
If GaN power HEMTs >1W
Higher power GaN for RF power amps goes to other transistors.
If radar transceiver modules
Complete RF modules with GaN become radar apparatus.
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Import Tips & Compliance
• GaN epitaxial layer specs and pinch-off voltage documentation required
• RF power sweep data confirms small signal vs power device status
• Potential EAR/ITAR controls for frequencies >18GHz applications
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