GaN Small Signal HEMT Transistor from Canada
Gallium Nitride (GaN) High Electron Mobility Transistor for microwave frequencies with <1W dissipation in 5G base stations and radar. Advanced compound semiconductor under HTS 8541.21.00.95. Offers superior power density vs silicon.
Duty Rate — Canada → United States
0%
Rate breakdown
9903.05.860%Universal product exemption (U.S. note 52(b))
Import Tips
• GaN epitaxial layer specs and pinch-off voltage documentation required
• RF power sweep data confirms small signal vs power device status
• Potential EAR/ITAR controls for frequencies >18GHz applications