GaN Small Signal HEMT Transistor from China
Gallium Nitride (GaN) High Electron Mobility Transistor for microwave frequencies with <1W dissipation in 5G base stations and radar. Advanced compound semiconductor under HTS 8541.21.00.95. Offers superior power density vs silicon.
Duty Rate — China → United States
50%
Rate breakdown
9903.91.0550%Effective with respect to entries on or after January 1, 2025, articles the product of China, as provided for in subdivision (f) of U.S. note 31 to this subchapter
9903.03.030%Articles the product of any country, as provided for in subdivision (aa)(ii) of U.S. note 2 to this subchapter
Import Tips
• GaN epitaxial layer specs and pinch-off voltage documentation required
• RF power sweep data confirms small signal vs power device status
• Potential EAR/ITAR controls for frequencies >18GHz applications