BS170 N-Channel FET Transistor

BS170 N-channel FET rated at 350mW for RF amplifiers and switching in amateur radio equipment. HTS 8541.21.00 for low-power non-photosensitive transistors including field-effect types.

Import Duty Rates by Country of Origin

Origin CountryMFN RateCh.99 SurchargesTotal Effective Rate
πŸ‡¨πŸ‡³ChinaFree+50.0%50%
πŸ‡²πŸ‡½MexicoFreeβ€”Free
πŸ‡¨πŸ‡¦CanadaFreeβ€”Free
πŸ‡©πŸ‡ͺGermanyFreeβ€”Free
πŸ‡―πŸ‡΅JapanFreeβ€”Free

Alternative Classifications

This product could be classified differently depending on its characteristics or intended use.

8523.52.00Lower: 35% vs 50%

If embedded in smartcard modules

Transistor assemblies for semiconductor media shift headings.

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Import Tips & Compliance

β€’ RF transistors need frequency range specs in import docs

β€’ Avoid bulk mixing with RFIC which classify under 8542

β€’ Declare military/comms end-use for export license checks