BS170 N-Channel FET Transistor
BS170 N-channel FET rated at 350mW for RF amplifiers and switching in amateur radio equipment. HTS 8541.21.00 for low-power non-photosensitive transistors including field-effect types.
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If embedded in smartcard modules
Transistor assemblies for semiconductor media shift headings.
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Import Tips & Compliance
• RF transistors need frequency range specs in import docs
• Avoid bulk mixing with RFIC which classify under 8542
• Declare military/comms end-use for export license checks
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