BS170 N-Channel FET Transistor from Mexico
BS170 N-channel FET rated at 350mW for RF amplifiers and switching in amateur radio equipment. HTS 8541.21.00 for low-power non-photosensitive transistors including field-effect types.
Duty Rate — Mexico → United States
0%
Rate breakdown
9903.05.860%Articles provided for in subdivision (b) of U.S. note 52 to this subchapter
Import Tips
• RF transistors need frequency range specs in import docs
• Avoid bulk mixing with RFIC which classify under 8542
• Declare military/comms end-use for export license checks