2N7000 N-Channel MOSFET Transistor from Germany
2N7000 enhancement-mode MOSFET with 400mW dissipation for low-power switching in logic level converters and battery circuits. Classifies under HTS 8541.21.00 as low-dissipation field-effect transistor.
Duty Rate — Germany → United States
0%
Rate breakdown
9903.05.860%Universal product exemption (U.S. note 52(b))
Import Tips
• MOSFET gate threshold specs must match datasheet for low-power verification
• Separate FETs from IGBTs which often exceed dissipation limits
• Anti-static reel packaging required; declare ESD protection class