2N7000 N-Channel MOSFET Transistor from China
2N7000 enhancement-mode MOSFET with 400mW dissipation for low-power switching in logic level converters and battery circuits. Classifies under HTS 8541.21.00 as low-dissipation field-effect transistor.
Duty Rate — China → United States
50%
Rate breakdown
9903.91.0550%Effective with respect to entries on or after January 1, 2025, articles the product of China, as provided for in subdivision (f) of U.S. note 31 to this subchapter
9903.05.860%Articles provided for in subdivision (b) of U.S. note 52 to this subchapter
Import Tips
• MOSFET gate threshold specs must match datasheet for low-power verification
• Separate FETs from IGBTs which often exceed dissipation limits
• Anti-static reel packaging required; declare ESD protection class