Chapter 3818 — Customs Tariff Headings
Products classified under Tariff item 38.18
100mm Aluminum-Doped SiC Wafer for Sensors
100mm P-type silicon carbide wafers doped with aluminum, designed for harsh-environment sensors and MEMS devices. These wafers are chemical compounds doped for use in electronics, presented in wafer form, and are classified under tariff item 3818.00.00.
3818.00.00150mm Nitrogen-Doped SiC Wafer for RF Devices
150mm silicon carbide wafers with nitrogen doping, optimized for high-frequency RF and microwave semiconductor applications. As doped chemical compounds in wafer form for electronics, they are classified under tariff item 3818.00.00.
3818.00.00156mm Phosphorus-Doped Poly Wafers for PV Modules
>- Standard 156mm polycrystalline silicon wafers phosphorus-doped for commercial solar PV module production. Uniform doping ensures consistent electrical conductivity for photovoltaic cells. This product falls under 3818.00.00 as a chemical element doped for use in electronics, in disc form.
3818.00.00200mm Production-Grade N-Doped SiC Wafer
Large 200mm nitrogen-doped SiC wafers for high-volume power semiconductor production, including EV inverters and solar optimizers. These wafers are doped chemical compounds in disc form for electronics, classified under tariff item 3818.00.00.
3818.00.002-Inch Doped Gallium Arsenide Wafer
>- A 2-inch diameter gallium arsenide (GaAs) wafer doped with silicon or tellurium to enhance electrical conductivity for semiconductor applications. Polished to an atomic-level finish, it is used as a substrate for epitaxial growth in electronic devices. This product falls under tariff item 3818.00.00 as a chemical element doped for use in electronics, in the form of a disc.
3818.00.003-Inch High-Mobility Electron GaAs Wafer
>- A 3-inch diameter GaAs wafer doped for high electron mobility, used in pseudomorphic HEMT structures for low-noise amplifiers. Polished on both sides with an epi-ready surface finish, it is a key substrate for high-frequency electronics. This product is classified under 3818.00.00 as a doped chemical element in wafer form for electronic use.
3818.00.003-inch High-Purity N-Doped SiC Wafer
Compact 3-inch nitrogen-doped silicon carbide wafers with ultra-low defect counts, used for research and prototyping in power electronics. As doped SiC in disc form for electronic use, they are classified under tariff item 3818.00.00.
3818.00.004-Inch N-Type Doped GaAs Wafer
>- A 4-inch GaAs wafer doped n-type with silicon impurities, designed for epitaxial growth in high-electron-mobility transistors (HEMTs). Used in satellite communications and 5G base stations due to superior electron mobility. This product falls under 3818.00.00 as a chemical element doped for use in electronics, in disc form.
3818.00.004-inch N-type Doped Silicon Carbide Wafer
4-inch diameter silicon carbide wafers doped with nitrogen to achieve N-type conductivity, used as substrates in power electronics manufacturing. These wafers are chemical compounds doped for use in electronics, presented in disc form, and are classified under tariff item 3818.00.00.
3818.00.005-inch Semi-Insulating SiC Wafer (Chromium-Doped)
5-inch high-resistivity silicon carbide wafers doped with chromium for semi-insulating properties, used in RF GaN devices. These wafers are specialty doped electronic wafers, classified under tariff item 3818.00.00 as chemical compounds doped for electronics.
3818.00.006-inch 4H-SiC P-type Doped Wafer
6-inch 4H polytype silicon carbide wafers doped with aluminum for P-type properties, essential for MOSFET production in electric vehicles. These wafers are doped for electronic applications and are classified under tariff item 3818.00.00.
3818.00.006-Inch P-Type Doped Gallium Arsenide Wafer
>- A high-purity 6-inch GaAs wafer doped p-type with zinc or beryllium for solar cell production and optoelectronics. Features low defect density for high-efficiency photovoltaic applications in space technology. This product is classified under 3818.00.00 as a doped chemical element in wafer form for electronic use.
3818.00.008-inch 4H N-Epi Ready Doped SiC Wafer
8-inch 4H-SiC wafers nitrogen-doped and epi-ready for immediate epitaxial growth in SiC power device production. These wafers are doped for electronics applications and are classified under tariff item 3818.00.00, supporting manufacturing of 1200V-class devices.
3818.00.008-Inch Doped GaAs Wafer for Photonics
>- A large 8-inch GaAs wafer doped for photonic integrated circuits, enabling high-speed data transmission in telecom. Features low dislocation density for VCSEL array fabrication. This product falls under 3818.00.00 as a chemical element doped for use in electronics, in disc form.
3818.00.00Aluminum-Doped Zinc Oxide (AZO) Wafers
Transparent conductive oxide wafers doped with aluminum, used as cost-effective alternatives to ITO in solar cells and touch panels. These wafers are doped chemical compounds for electronics, classified under tariff item 3818.00.00 for their high transparency and low resistivity.
3818.00.00Aluminum-Doped Zinc Oxide Sputtering Targets
Aluminum-doped zinc oxide (AZO) sputtering targets in disc form, used for depositing transparent conductive oxide films in touchscreens and solar cells. The aluminum doping imparts the electrical conductivity required for electronic applications, and the disc shape qualifies under this tariff item.
3818.00.00Antimony-Doped Silicon Wafers
Antimony-doped silicon wafers in standard 200mm disc format, designed for high-temperature n-type applications in power electronics. The antimony doping makes them suitable for semiconductor device fabrication, falling under the tariff item for doped chemical elements for electronics.
3818.00.00Arsenic-Doped Gallium Arsenide Wafers
Arsenic-doped gallium arsenide wafers used for high-frequency RF and optoelectronic devices like LEDs. These compound semiconductor wafers are in disc form and doped to enhance electronic properties, matching the tariff item's scope.
3818.00.00Arsenic-Doped Indium Arsenide Wafers
Arsenic-doped indium arsenide wafers in disc form, designed for high-electron-mobility transistors in terahertz electronics. The doping and wafer format align with the tariff item for chemical compounds doped for electronic use.
3818.00.00Arsenic-Doped Polycrystalline Silicon Wafers
>- Polycrystalline silicon wafers with arsenic doping for high-mobility n-type applications in RF electronics. Arsenic provides superior electron mobility compared to phosphorus. This product is classified under 3818.00.00 as a doped chemical element in wafer form for electronic use.
3818.00.00Boron-Doped Diamond Wafers
Boron-doped diamond wafers produced by CVD, heavily doped for high-power electronics and quantum devices. These discs are chemical compounds doped for electronic applications, falling under the tariff item.
3818.00.00Boron-Doped Poly-Si Wafers for Power Semiconductors
>- Polycrystalline silicon wafers doped with boron to achieve p-type conductivity, designed for manufacturing power transistors and diodes in electronics. This product falls under 3818.00.00 as a chemical element doped for use in electronics, in disc form.
3818.00.00Boron-Doped Silicon Wafers
Boron-doped silicon wafers, typically 300mm in diameter, used to create p-type semiconductors for integrated circuits. The intentional boron doping for electronic applications places them under this tariff item.
3818.00.00Doped Polycrystalline Silicon Solar Wafers
>- Polycrystalline silicon wafers doped with phosphorus or boron to enhance electrical conductivity, primarily used in photovoltaic solar cell production. This product is classified under 3818.00.00 as a doped chemical element in wafer form for electronic use.
3818.00.00Double-Sided Polished Boron-Doped Silicon Wafers
Double-sided polished boron-doped silicon wafers for MEMS and SOI processing, with mirror polish on both sides. These are standard electronic substrates in disc form, doped for electronic applications.
3818.00.00Epi-Ready Doped GaAs Wafer 100mm
>- A 100mm epi-ready GaAs wafer doped with controlled carrier concentration for immediate MBE growth. Used in gallium nitride overgrowth for power electronics. This product is classified under 3818.00.00 as a doped chemical element in wafer form for electronic use.
3818.00.00Epitaxial Ready Nitrogen-Doped Silicon Carbide Wafers
Epi-ready nitrogen-doped silicon carbide wafers in 4H-SiC format, designed for homoepitaxy in Schottky diodes and MOSFETs. The nitrogen doping and wafer form qualify them under the tariff item for doped chemical compounds for electronics.
3818.00.00GaAs Wafer Doped for Solar Cell Production
>- A doped GaAs wafer optimized for multi-junction solar cells used in satellites, with precise dopant profile for high efficiency (>30%). Thin-film ready with back surface field doping. This product falls under 3818.00.00 as a chemical element doped for use in electronics, in disc form.
3818.00.00High-Purity Doped Poly-Si Wafers for MEMS Sensors
>- High-purity polycrystalline silicon wafers doped for micro-electro- mechanical systems (MEMS) like accelerometers and gyroscopes. Doping facilitates the electrical properties needed for sensor operation. This product falls under 3818.00.00 as a chemical element doped for use in electronics, in disc form.
3818.00.00Indium-Doped Germanium Wafers
Indium-doped germanium wafers used for p-type infrared detectors and fiber optic transceivers. These germanium discs are doped for specialized electronic applications, matching the tariff item's description.
3818.00.00Magnesium-Doped Gallium Nitride Wafers
Magnesium-doped gallium nitride wafers on sapphire substrates, used for blue LEDs and power HEMTs. The magnesium doping for optoelectronic applications places them under this tariff item.
3818.00.00Nitrogen-Doped Silicon Carbide Wafers
Nitrogen-doped silicon carbide wafers in 4H-SiC format, designed for high-voltage power electronics and EV inverters. These 150mm discs are doped for electronic performance, qualifying under the tariff item.
3818.00.00N-Type Doped Poly Silicon Wafers for Solar Inverters
>- N-type polycrystalline silicon wafers doped for use in power electronics of solar inverters and converters. Doping is optimized for high-efficiency power switching. This product is classified under 3818.00.00 as a doped chemical element in wafer form for electronic use.
3818.00.00Phosphorus-Doped Indium Phosphide Wafers
Phosphorus-doped indium phosphide wafers for telecom lasers and high-speed electronics, in 4-inch disc form. The phosphorus doping for photonic integrated circuits qualifies them under this tariff item.
3818.00.00Phosphorus-Doped N-Type Silicon Wafers
Phosphorus-doped n-type silicon wafers used in solar cells and CMOS manufacturing. The doping alters electrical properties for electronic circuitry, placing them under this tariff item.
3818.00.00Phosphorus-Doped Polycrystalline Silicon Wafers
>- Wafers made from polycrystalline silicon doped with phosphorus for n-type semiconductor properties, used in thin-film transistors and sensors. This product falls under 3818.00.00 as a chemical element doped for use in electronics, in disc form.
3818.00.00P-Type Doped Polycrystalline Silicon Wafers 6-inch
6-inch diameter polycrystalline silicon wafers with p-type doping, used as substrates for fabricating MOSFETs and IGBTs in consumer electronics. The wafers are chemical elements doped for use in electronics, presented in disc form, which qualifies them under tariff item 3818.00.00.
3818.00.00P-Type SOI Wafers with Boron Doping
P-type SOI wafers with boron doping, featuring a buried oxide layer and handle wafer for low-power CMOS and RF-SOI applications. The boron doping for electronic use qualifies them under this tariff item.
3818.00.00Tellurium-Doped Cadmium Telluride Wafers
Tellurium-doped cadmium telluride wafers for thin-film solar cells and radiation detectors. These infrared semiconductor wafers in disc form are doped for electronic applications, falling under the tariff item.
3818.00.00Undoped GaAs Wafer with Epitaxial Doping Layer
>- A semi-insulating undoped GaAs substrate wafer with a thin epitaxial doped layer grown on the surface for MMIC production. The doping is integral for electronic functionality in monolithic microwave ICs. This product is classified under 3818.00.00 as a doped chemical element in wafer form for electronic use.