Chemical elements doped for use in electronics, in the form of discs, wafers or similar forms; chemical compounds doped for use in electronics.
Refractory cements, mortars, concretes and similar compositions, including dolomite ramming mix, other than products of heading 38.01. > Refractory cements, mortars, concretes and similar compositions, including dolomite ramming mix, other than products of heading 38.01. > Chemical elements doped for use in electronics, in the form of discs, wafers or similar forms; chemical compounds doped for use in electronics. > Chemical elements doped for use in electronics, in the form of discs, wafers or similar forms; chemical compounds doped for use in electronics.
Duty Rate (from China)
Products classified under Tariff item 3818.00.00
Aluminum-Doped Zinc Oxide Sputtering Targets
Aluminum-doped zinc oxide (AZO) sputtering targets in disc form, used for depositing transparent conductive oxide films in touchscreens and solar cells. The aluminum doping imparts the electrical conductivity required for electronic applications, and the disc shape qualifies under this tariff item.
Antimony-Doped Silicon Wafers
Antimony-doped silicon wafers in standard 200mm disc format, designed for high-temperature n-type applications in power electronics. The antimony doping makes them suitable for semiconductor device fabrication, falling under the tariff item for doped chemical elements for electronics.
Arsenic-Doped Gallium Arsenide Wafers
Arsenic-doped gallium arsenide wafers used for high-frequency RF and optoelectronic devices like LEDs. These compound semiconductor wafers are in disc form and doped to enhance electronic properties, matching the tariff item's scope.
Arsenic-Doped Indium Arsenide Wafers
Arsenic-doped indium arsenide wafers in disc form, designed for high-electron-mobility transistors in terahertz electronics. The doping and wafer format align with the tariff item for chemical compounds doped for electronic use.
Boron-Doped Diamond Wafers
Boron-doped diamond wafers produced by CVD, heavily doped for high-power electronics and quantum devices. These discs are chemical compounds doped for electronic applications, falling under the tariff item.
Boron-Doped Silicon Wafers
Boron-doped silicon wafers, typically 300mm in diameter, used to create p-type semiconductors for integrated circuits. The intentional boron doping for electronic applications places them under this tariff item.
Double-Sided Polished Boron-Doped Silicon Wafers
Double-sided polished boron-doped silicon wafers for MEMS and SOI processing, with mirror polish on both sides. These are standard electronic substrates in disc form, doped for electronic applications.
Epitaxial Ready Nitrogen-Doped Silicon Carbide Wafers
Epi-ready nitrogen-doped silicon carbide wafers in 4H-SiC format, designed for homoepitaxy in Schottky diodes and MOSFETs. The nitrogen doping and wafer form qualify them under the tariff item for doped chemical compounds for electronics.
Indium-Doped Germanium Wafers
Indium-doped germanium wafers used for p-type infrared detectors and fiber optic transceivers. These germanium discs are doped for specialized electronic applications, matching the tariff item's description.
Magnesium-Doped Gallium Nitride Wafers
Magnesium-doped gallium nitride wafers on sapphire substrates, used for blue LEDs and power HEMTs. The magnesium doping for optoelectronic applications places them under this tariff item.
Nitrogen-Doped Silicon Carbide Wafers
Nitrogen-doped silicon carbide wafers in 4H-SiC format, designed for high-voltage power electronics and EV inverters. These 150mm discs are doped for electronic performance, qualifying under the tariff item.
Phosphorus-Doped Indium Phosphide Wafers
Phosphorus-doped indium phosphide wafers for telecom lasers and high-speed electronics, in 4-inch disc form. The phosphorus doping for photonic integrated circuits qualifies them under this tariff item.
Phosphorus-Doped N-Type Silicon Wafers
Phosphorus-doped n-type silicon wafers used in solar cells and CMOS manufacturing. The doping alters electrical properties for electronic circuitry, placing them under this tariff item.
P-Type SOI Wafers with Boron Doping
P-type SOI wafers with boron doping, featuring a buried oxide layer and handle wafer for low-power CMOS and RF-SOI applications. The boron doping for electronic use qualifies them under this tariff item.
Tellurium-Doped Cadmium Telluride Wafers
Tellurium-doped cadmium telluride wafers for thin-film solar cells and radiation detectors. These infrared semiconductor wafers in disc form are doped for electronic applications, falling under the tariff item.