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Nitrogen-Doped Silicon Carbide Wafers

Nitrogen-doped silicon carbide wafers in 4H-SiC format, designed for high-voltage power electronics and EV inverters. These 150mm discs are doped for electronic performance, qualifying under the tariff item.

Import Duty Rates by Country of Origin

Origin CountryMFN TariffSurtaxesTotal Effective Rate
πŸ‡¨πŸ‡³ChinaFreeβ€”Free
πŸ‡²πŸ‡½MexicoFreeβ€”Free
πŸ‡ΊπŸ‡ΈUnited StatesFreeβ€”Free
πŸ‡©πŸ‡ͺGermanyFreeβ€”Free
πŸ‡―πŸ‡΅JapanFreeβ€”Free

Alternative Classifications

This product could be classified differently depending on its characteristics or intended use.

2849.20.00Same rate: Free

If the silicon carbide is not doped or in powder form.

Undoped silicon carbide in other forms falls under Chapter 28.

Not sure which classification is right?

The Tariff Assistant works through the GRI rules on your specific product to reach the right tariff item β€” and can price the duty on it in the same conversation.

Import Tips & Compliance

β€’ Provide wafer diameter and doping specifications

β€’ Confirm the intended use in power electronics

β€’ Keep records of the polytype (4H-SiC) for customs

Related Products under Tariff item 3818.00.00

Aluminum-Doped Zinc Oxide Sputtering Targets

Aluminum-doped zinc oxide (AZO) sputtering targets in disc form, used for depositing transparent conductive oxide films in touchscreens and solar cells. The aluminum doping imparts the electrical conductivity required for electronic applications, and the disc shape qualifies under this tariff item.

Antimony-Doped Silicon Wafers

Antimony-doped silicon wafers in standard 200mm disc format, designed for high-temperature n-type applications in power electronics. The antimony doping makes them suitable for semiconductor device fabrication, falling under the tariff item for doped chemical elements for electronics.

Arsenic-Doped Gallium Arsenide Wafers

Arsenic-doped gallium arsenide wafers used for high-frequency RF and optoelectronic devices like LEDs. These compound semiconductor wafers are in disc form and doped to enhance electronic properties, matching the tariff item's scope.

Arsenic-Doped Indium Arsenide Wafers

Arsenic-doped indium arsenide wafers in disc form, designed for high-electron-mobility transistors in terahertz electronics. The doping and wafer format align with the tariff item for chemical compounds doped for electronic use.

Boron-Doped Diamond Wafers

Boron-doped diamond wafers produced by CVD, heavily doped for high-power electronics and quantum devices. These discs are chemical compounds doped for electronic applications, falling under the tariff item.

Boron-Doped Silicon Wafers

Boron-doped silicon wafers, typically 300mm in diameter, used to create p-type semiconductors for integrated circuits. The intentional boron doping for electronic applications places them under this tariff item.