P-Type SOI Wafers with Boron Doping
P-type SOI wafers with boron doping, featuring a buried oxide layer and handle wafer for low-power CMOS and RF-SOI applications. The boron doping for electronic use qualifies them under this tariff item.
Import Duty Rates by Country of Origin
| Origin Country | MFN Tariff | Surtaxes | Total Effective Rate |
|---|---|---|---|
| 🇨🇳China | Free | — | Free |
| 🇲🇽Mexico | Free | — | Free |
| 🇺🇸United States | Free | — | Free |
| 🇩🇪Germany | Free | — | Free |
| 🇯🇵Japan | Free | — | Free |
More Specific Codes
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Import Tips & Compliance
• Document the SOI structure and boron doping for customs
• Specify the device layer thickness and handle wafer type
• Ensure the wafers are for electronic applications
Related Products under Tariff item 3818.00.00
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