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3818.00.00/P-Type SOI Wafers with Boron Doping/China

P-Type SOI Wafers with Boron Doping from China

P-type SOI wafers with boron doping, featuring a buried oxide layer and handle wafer for low-power CMOS and RF-SOI applications. The boron doping for electronic use qualifies them under this tariff item.

Duty Rate — China → Canada

0%
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Import Tips

• Document the SOI structure and boron doping for customs

• Specify the device layer thickness and handle wafer type

• Ensure the wafers are for electronic applications

P-Type SOI Wafers with Boron Doping from China — Import Duty Rate | Tariff item 3818.00.00