Epitaxial Ready Nitrogen-Doped Silicon Carbide Wafers
Epi-ready nitrogen-doped silicon carbide wafers in 4H-SiC format, designed for homoepitaxy in Schottky diodes and MOSFETs. The nitrogen doping and wafer form qualify them under the tariff item for doped chemical compounds for electronics.
Import Duty Rates by Country of Origin
| Origin Country | MFN Tariff | Surtaxes | Total Effective Rate |
|---|---|---|---|
| 🇨🇳China | Free | — | Free |
| 🇲🇽Mexico | Free | — | Free |
| 🇺🇸United States | Free | — | Free |
| 🇩🇪Germany | Free | — | Free |
| 🇯🇵Japan | Free | — | Free |
More Specific Codes
This product may fall under a more specific subheading:
Alternative Classifications
This product could be classified differently depending on its characteristics or intended use.
If the silicon carbide is not doped or not in wafer form.
Undoped silicon carbide in other forms falls under Chapter 28.
Not sure which classification is right?
The Tariff Assistant works through the GRI rules on your specific product to reach the right tariff item — and can price the duty on it in the same conversation.
Import Tips & Compliance
• Provide epi-ready surface specifications and doping concentration
• Ensure the wafers are for electronic applications, not abrasive uses
• Verify any end-use certificates required for semiconductor materials
Related Products under Tariff item 3818.00.00
Aluminum-Doped Zinc Oxide Sputtering Targets
Aluminum-doped zinc oxide (AZO) sputtering targets in disc form, used for depositing transparent conductive oxide films in touchscreens and solar cells. The aluminum doping imparts the electrical conductivity required for electronic applications, and the disc shape qualifies under this tariff item.
Antimony-Doped Silicon Wafers
Antimony-doped silicon wafers in standard 200mm disc format, designed for high-temperature n-type applications in power electronics. The antimony doping makes them suitable for semiconductor device fabrication, falling under the tariff item for doped chemical elements for electronics.
Arsenic-Doped Gallium Arsenide Wafers
Arsenic-doped gallium arsenide wafers used for high-frequency RF and optoelectronic devices like LEDs. These compound semiconductor wafers are in disc form and doped to enhance electronic properties, matching the tariff item's scope.
Arsenic-Doped Indium Arsenide Wafers
Arsenic-doped indium arsenide wafers in disc form, designed for high-electron-mobility transistors in terahertz electronics. The doping and wafer format align with the tariff item for chemical compounds doped for electronic use.
Boron-Doped Diamond Wafers
Boron-doped diamond wafers produced by CVD, heavily doped for high-power electronics and quantum devices. These discs are chemical compounds doped for electronic applications, falling under the tariff item.
Boron-Doped Silicon Wafers
Boron-doped silicon wafers, typically 300mm in diameter, used to create p-type semiconductors for integrated circuits. The intentional boron doping for electronic applications places them under this tariff item.