Tellurium-Doped Cadmium Telluride Wafers
Tellurium-doped cadmium telluride wafers for thin-film solar cells and radiation detectors. These infrared semiconductor wafers in disc form are doped for electronic applications, falling under the tariff item.
Import Duty Rates by Country of Origin
| Origin Country | MFN Tariff | Surtaxes | Total Effective Rate |
|---|---|---|---|
| 🇨🇳China | Free | — | Free |
| 🇲🇽Mexico | Free | — | Free |
| 🇺🇸United States | Free | — | Free |
| 🇩🇪Germany | Free | — | Free |
| 🇯🇵Japan | Free | — | Free |
More Specific Codes
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Import Tips & Compliance
• Provide doping concentration and wafer specifications
• Confirm the intended use in electronics or photovoltaics
• Check for any environmental regulations on cadmium
Related Products under Tariff item 3818.00.00
100mm Aluminum-Doped SiC Wafer for Sensors
100mm P-type silicon carbide wafers doped with aluminum, designed for harsh-environment sensors and MEMS devices. These wafers are chemical compounds doped for use in electronics, presented in wafer form, and are classified under tariff item 3818.00.00.
150mm Nitrogen-Doped SiC Wafer for RF Devices
150mm silicon carbide wafers with nitrogen doping, optimized for high-frequency RF and microwave semiconductor applications. As doped chemical compounds in wafer form for electronics, they are classified under tariff item 3818.00.00.
156mm Phosphorus-Doped Poly Wafers for PV Modules
>- Standard 156mm polycrystalline silicon wafers phosphorus-doped for commercial solar PV module production. Uniform doping ensures consistent electrical conductivity for photovoltaic cells. This product falls under 3818.00.00 as a chemical element doped for use in electronics, in disc form.
200mm Production-Grade N-Doped SiC Wafer
Large 200mm nitrogen-doped SiC wafers for high-volume power semiconductor production, including EV inverters and solar optimizers. These wafers are doped chemical compounds in disc form for electronics, classified under tariff item 3818.00.00.
2-Inch Doped Gallium Arsenide Wafer
>- A 2-inch diameter gallium arsenide (GaAs) wafer doped with silicon or tellurium to enhance electrical conductivity for semiconductor applications. Polished to an atomic-level finish, it is used as a substrate for epitaxial growth in electronic devices. This product falls under tariff item 3818.00.00 as a chemical element doped for use in electronics, in the form of a disc.
3-Inch High-Mobility Electron GaAs Wafer
>- A 3-inch diameter GaAs wafer doped for high electron mobility, used in pseudomorphic HEMT structures for low-noise amplifiers. Polished on both sides with an epi-ready surface finish, it is a key substrate for high-frequency electronics. This product is classified under 3818.00.00 as a doped chemical element in wafer form for electronic use.