3-inch High-Purity N-Doped SiC Wafer
Compact 3-inch nitrogen-doped silicon carbide wafers with ultra-low defect counts, used for research and prototyping in power electronics. As doped SiC in disc form for electronic use, they are classified under tariff item 3818.00.00.
Import Duty Rates by Country of Origin
| Origin Country | MFN Tariff | Surtaxes | Total Effective Rate |
|---|---|---|---|
| 🇨🇳China | Free | — | Free |
| 🇲🇽Mexico | Free | — | Free |
| 🇺🇸United States | Free | — | Free |
| 🇩🇪Germany | Free | — | Free |
| 🇯🇵Japan | Free | — | Free |
More Specific Codes
This product may fall under a more specific subheading:
Alternative Classifications
This product could be classified differently depending on its characteristics or intended use.
If the wafers are already processed into diodes or transistors
Processed semiconductor devices are classified in Chapter 85.
Not sure which classification is right?
The Tariff Assistant works through the GRI rules on your specific product to reach the right tariff item — and can price the duty on it in the same conversation.
Import Tips & Compliance
• For research or prototyping purposes, indicate the intended use on customs documentation to avoid misclassification
• Keep records of the wafer's doping and defect specifications
• Verify whether the wafers qualify for any duty relief programs for R&D, such as the Duties Relief Program
Related Products under Tariff item 3818.00.00
100mm Aluminum-Doped SiC Wafer for Sensors
100mm P-type silicon carbide wafers doped with aluminum, designed for harsh-environment sensors and MEMS devices. These wafers are chemical compounds doped for use in electronics, presented in wafer form, and are classified under tariff item 3818.00.00.
150mm Nitrogen-Doped SiC Wafer for RF Devices
150mm silicon carbide wafers with nitrogen doping, optimized for high-frequency RF and microwave semiconductor applications. As doped chemical compounds in wafer form for electronics, they are classified under tariff item 3818.00.00.
156mm Phosphorus-Doped Poly Wafers for PV Modules
>- Standard 156mm polycrystalline silicon wafers phosphorus-doped for commercial solar PV module production. Uniform doping ensures consistent electrical conductivity for photovoltaic cells. This product falls under 3818.00.00 as a chemical element doped for use in electronics, in disc form.
200mm Production-Grade N-Doped SiC Wafer
Large 200mm nitrogen-doped SiC wafers for high-volume power semiconductor production, including EV inverters and solar optimizers. These wafers are doped chemical compounds in disc form for electronics, classified under tariff item 3818.00.00.
2-Inch Doped Gallium Arsenide Wafer
>- A 2-inch diameter gallium arsenide (GaAs) wafer doped with silicon or tellurium to enhance electrical conductivity for semiconductor applications. Polished to an atomic-level finish, it is used as a substrate for epitaxial growth in electronic devices. This product falls under tariff item 3818.00.00 as a chemical element doped for use in electronics, in the form of a disc.
3-Inch High-Mobility Electron GaAs Wafer
>- A 3-inch diameter GaAs wafer doped for high electron mobility, used in pseudomorphic HEMT structures for low-noise amplifiers. Polished on both sides with an epi-ready surface finish, it is a key substrate for high-frequency electronics. This product is classified under 3818.00.00 as a doped chemical element in wafer form for electronic use.