3-inch High-Purity N-Doped SiC Wafer from United States
Compact 3-inch nitrogen-doped silicon carbide wafers with ultra-low defect counts, used for research and prototyping in power electronics. As doped SiC in disc form for electronic use, they are classified under tariff item 3818.00.00.
Duty Rate — United States → Canada
0%
Import Tips
• For research or prototyping purposes, indicate the intended use on customs documentation to avoid misclassification
• Keep records of the wafer's doping and defect specifications
• Verify whether the wafers qualify for any duty relief programs for R&D, such as the Duties Relief Program