Diodes, other than photosensitive or light-emitting diodes (LED)
Semiconductor devices (for example, diodes, transistors, semiconductor-based transducers); photosensitive semiconductor devices, including photovoltaic cells whether or not assembled in modules or made up into panels; light-emitting diodes (LED), whether or not assembled with other light-emitting diodes (LED); mounted piezo-electric crystals. > Diodes, other than photosensitive or light-emitting diodes (LED)
Duty Rate (from China)
Subheadings
Products classified under Tariff item 8541.10.00
1N4007 Rectifier Diode
The 1N4007 is a standard silicon rectifier diode designed for general-purpose rectification in power supplies and chargers. It allows current to flow in one direction only, blocking reverse voltage up to 1000V, making it a classic non-photosensitive, non-LED diode.
1N4148 Switching Diode
The 1N4148 is a high-speed silicon switching diode used in signal processing, protection circuits, and high-frequency applications. It features fast switching times under 4ns, fitting tariff item 8541.10.00 as a non-photosensitive, non-LED diode.
1N4728A 3.3V Zener Diode
The 1N4728A is a 3.3V Zener diode commonly used in low-voltage reference and protection circuits for microcontrollers and sensors. It operates through the Zener breakdown mechanism, distinguishing it from other diode types. As a discrete, non-photosensitive, non-LED diode, it is classified under this tariff item.
1N4733A 5.1V Zener Diode
The 1N4733A is a 5.1V axial-lead silicon Zener diode designed for voltage regulation in electronic circuits. It operates through the Zener breakdown mechanism, making it a specific type of non-photosensitive, non-LED diode. This discrete semiconductor device is classified under this tariff item.
1N5226B 3.3V Zener Diode
1N5226B is a 3.3V 500mW Zener diode with 5% tolerance for precision voltage regulation in digital logic circuits. It operates through the Zener breakdown mechanism, classifying it as a non-photosensitive, non-LED diode. This discrete semiconductor device is classified under this tariff item.
1N751 5.6V Zener Diode
The 1N751 is a 5.6V, 400mW Zener diode ideal for stabilizing voltages in analog circuits and instrumentation. It operates through the Zener breakdown mechanism, classifying it as a non-photosensitive, non-LED diode. This discrete semiconductor device is classified under this tariff item.
200mm Silicon Rectifier Diode Wafer
A 200mm diameter silicon epitaxial wafer containing p-n junction arrays for high-voltage rectifier diodes, used in automotive alternators and industrial power supplies. The wafer is optimized for forward voltage drop and surge current performance. As an unmounted semiconductor device in wafer form, it is classified as a diode other than photosensitive or light-emitting.
Automotive Grade Silicon Flyback Diode Wafer
AEC-Q101 qualified 200mm silicon wafers for flyback protection diodes in automotive ignition systems and DC-DC converters. Designed for high surge current and automotive temperature extremes, these wafers contain unmounted diode structures. They are classified as non-photosensitive, non-LED diodes in wafer form.
Avalanche Diode 1N5908
The 1N5908 avalanche diode provides transient voltage suppression through controlled breakdown, protecting sensitive electronics from ESD and surges. Classified under tariff item 8541.10.00 as a protective non-photosensitive diode.
Beam Lead Microwave Diode
The beam lead microwave diode is a gold beam lead Schottky diode chip designed for hybrid microwave circuits in phased array radars and other high-frequency applications. As an unpackaged microwave diode die with a cutoff frequency above 40 GHz, it is classified under tariff item 8541.10.00 as a non-photosensitive, non-LED diode.
Bridge Rectifier Diode GBU4J
The GBU4J is a 4-pin silicon bridge rectifier diode rated for 600V/4A, used in AC-DC power adapters and battery chargers. It contains four diodes in one package for full-wave rectification, still classified under tariff item 8541.10.00.
BZT52C2V7 2.7V SOT-23 Zener Diode
BZT52C2V7 is a low-voltage 2.7V Zener diode in SOT-23 package for reference circuits in portable electronics. It operates through the Zener breakdown mechanism, classifying it as a non-photosensitive, non-LED diode. This discrete semiconductor device is classified under this tariff item.
BZX55C12 12V Zener Diode
BZX55C12 is a 12V, 500mW surface-mount compatible Zener diode for transient suppression and reference voltage in power supplies. It operates through the Zener breakdown mechanism, classifying it as a non-photosensitive, non-LED diode. This discrete semiconductor device is classified under this tariff item.
Dual Series Diode BAV99
BAV99 contains two 70V/200mA switching diodes in SOT-23 package for space-constrained clamping and detection circuits. Common in portable electronics, it falls under tariff item 8541.10.00 as a non-photosensitive diode array.
Fast Recovery Epitaxial Diode (FRED) MUR1560
MUR1560 FRED diodes offer 15A/600V with 250ns recovery time for high-frequency switchers and inverters. Epitaxial construction enables soft recovery, under tariff item 8541.10.00 as a non-photosensitive diode.
GaAs Microwave Gunn Diode
The GaAs microwave Gunn diode is a Gallium Arsenide diode that operates as an oscillator for 24 GHz automotive radar and motion sensors, generating continuous wave power up to 50 mW. As a transferred electron effect microwave diode, it is classified under tariff item 8541.10.00 as a non-photosensitive, non-LED diode.
Gallium Arsenide PIN Diode Die
Individual unmounted gallium arsenide PIN diode dice designed for RF switching, attenuation, and microwave applications in telecommunications. These dice feature precise p-i-n junction structures formed on a GaAs substrate. As discrete semiconductor devices without packaging, they are classified as non-photosensitive, non-LED diodes.
GaN Microwave Schottky Diode
The GaN microwave Schottky diode is a gallium nitride diode designed for microwave frequencies above 1 GHz, used in radar systems and satellite communications. It is classified under tariff item 8541.10.00 as a non-photosensitive, non-LED diode, given its semiconductor-based operation.
Germanium Point Contact Diode Chip
Unmounted germanium chips with whisker point-contact diodes for detector applications in microwave receivers and instrumentation. Known for low forward voltage and high-frequency response, these chips are discrete semiconductor devices. They are classified as non-photosensitive, non-LED diodes.
Germanium Point Contact Diode OA90
The OA90 is a vintage germanium diode used in radio frequency detection and vintage electronics restoration. It offers low forward voltage for crystal radio detectors, classified under tariff item 8541.10.00 for non-photosensitive diodes.
Gun Diode (Gunn Diode) for Microwave
Gunn diodes generate microwave frequencies through negative resistance effect, used in radar, police speed guns, and motion detectors. As bulk semiconductor transfer electron devices functioning as diodes, they classify under tariff item 8541.10.00.
High Voltage Silicon Diode 2CL2512S
2CL2512S handles 25kV pulses for CRT displays and X-ray equipment. High voltage stud-mount diode under tariff item 8541.10.00 as a non-photosensitive diode.
High Voltage Silicon Diode Wafer (1500V)
8-inch silicon wafers fabricated with 1500V breakdown planar diodes for X-ray generators and industrial power systems. Features field-limiting rings for high-voltage reliability. As unmounted wafers with diode structures, they are classified as non-photosensitive, non-LED diodes.
IMPATT Microwave Diode
The IMPATT microwave diode is an Impact Avalanche Transit Time diode used for high-power microwave amplifiers in weather radar and satellite uplinks, operating up to 100 GHz. As a negative resistance diode, it is classified under tariff item 8541.10.00 as a non-photosensitive, non-LED semiconductor device.
Microwave Limiters Diode
The microwave limiter diode is a PIN diode used for receiver protection in electronic warfare systems, capable of handling up to 100W peak power at C-band frequencies. As a non-photosensitive, non-LED diode, it is classified under tariff item 8541.10.00 for semiconductor devices.
Microwave Tunnel Diode
The microwave tunnel diode, also known as an Esaki diode, is used for ultra-fast microwave detectors and oscillators in instrumentation, leveraging quantum tunneling negative resistance at Ka-band frequencies. It is classified under tariff item 8541.10.00 as a non-photosensitive, non-LED semiconductor diode.
MMSZ4699T1G 18V SOD-123 Zener
The MMSZ4699T1G is an 18V precision Zener diode in a compact SOD-123 surface-mount package, designed for voltage regulation and ESD protection in space-constrained printed circuit boards. As a non-photosensitive, non-LED diode, it falls under tariff item 8541.10.00, which covers semiconductor diodes other than photosensitive or light-emitting types.
PIN Photodiode-less Switching PIN Diode
PIN diodes feature intrinsic region for RF switching and attenuation in attenuators and phase shifters. Used in wireless infrastructure, they classify under tariff item 8541.10.00 when specified for non-photosensitive switching applications.
RF Detector Diode AA119
AA119 Schottky detector diodes for AM/FM signal detection in radio receivers. Low barrier height for sensitivity, classified under tariff item 8541.10.00 as a non-photosensitive diode.
RF Silicon Varactor Diode Die
Unmounted silicon hyperabrupt junction varactor diode dice for voltage-controlled oscillators and tuning circuits in wireless communications. Exhibits precise capacitance-voltage characteristics. These dice are classified as non-photosensitive, non-LED diodes.
Schottky Barrier Diode BAT54
The BAT54 is a Schottky diode with low forward voltage drop (0.3V) ideal for high-efficiency rectification in switch-mode power supplies and RF detectors. Its metal-semiconductor junction enables fast switching, placing it under tariff item 8541.10.00.
Silicon Carbide Power Diode Die
Unmounted SiC Schottky diode dice for high-temperature, high-power applications in EV inverters and renewable energy systems. These 1200V-rated dice offer low switching losses compared to silicon. They are classified as non-photosensitive, non-LED diodes.
Silicon Schottky Diode Wafer
A large silicon wafer containing thousands of unmounted Schottky diode chips used in power rectification and high-frequency switching applications. Produced through semiconductor fabrication processes, the wafer is unseparated. It is classified as a non-photosensitive, non-LED diode in wafer form.
Silicon Zener Diode Wafer
300mm silicon wafers patterned with Zener diode structures for voltage regulation in power supplies and protection circuits. These unseparated wafers undergo diffusion and metallization processes before dicing. They are classified as non-photosensitive, non-LED diodes.
SMAJ5.6CA 5.6V TVS Zener Diode
The SMAJ5.6CA is a bidirectional 5.6V Transient Voltage Suppression (TVS) diode, commonly used for ESD and surge protection in USB ports and other electronic interfaces. Despite its TVS marketing, it functions as a Zener diode and is classified under tariff item 8541.10.00 as a non-photosensitive, non-LED semiconductor diode.
Tunnel Diode NEC JV22C
Tunnel diodes exhibit negative resistance for ultra-high frequency oscillators and amplifiers in microwave circuits. The NEC JV22C operates at 1-10GHz, classifying under tariff item 8541.10.00 for specialty semiconductor diodes.
TZM5236B 6.8V Zener Diode
The TZM5236B is a 6.8V 500mW Zener diode in a molded plastic DO-35 through-hole package, used for general-purpose voltage regulation in power supplies and reference circuits. As a standard Zener semiconductor device, it is classified under tariff item 8541.10.00 for diodes other than photosensitive or light-emitting types.
Varicap Tuning Diode BB131
The BB131 varicap (varactor) diode varies capacitance with reverse bias voltage, used in radio tuners and voltage-controlled oscillators. As a voltage-variable capacitor diode, it falls under tariff item 8541.10.00 for non-photosensitive diodes.
Zener Diode 1N4733A
The 1N4733A is a 5.1V Zener diode used for voltage regulation and reference in power supplies and stabilizers. It maintains constant voltage across its terminals under reverse bias, qualifying under tariff item 8541.10.00 for non-photosensitive diodes.
ZMMBZ5231B 5.1V Mini-MELF Zener
The ZMMBZ5231B is a 5.1V precision Zener diode in a Mini-MELF cylindrical surface-mount package, designed for automated SMT assembly in voltage regulation circuits. It is classified under tariff item 8541.10.00 as a non-photosensitive, non-LED semiconductor diode.