Beam Lead Microwave Diode
The beam lead microwave diode is a gold beam lead Schottky diode chip designed for hybrid microwave circuits in phased array radars and other high-frequency applications. As an unpackaged microwave diode die with a cutoff frequency above 40 GHz, it is classified under tariff item 8541.10.00 as a non-photosensitive, non-LED diode.
Import Duty Rates by Country of Origin
| Origin Country | MFN Tariff | Surtaxes | Total Effective Rate |
|---|---|---|---|
| 🇨🇳China | Free | — | Free |
| 🇲🇽Mexico | Free | — | Free |
| 🇺🇸United States | Free | — | Free |
| 🇩🇪Germany | Free | — | Free |
| 🇯🇵Japan | Free | — | Free |
More Specific Codes
This product may fall under a more specific subheading:
Alternative Classifications
This product could be classified differently depending on its characteristics or intended use.
If the diode is integrated into a multi-component module
Multi-component integrated circuits are classified under heading 8542.
If the diode is part of a communication apparatus
Parts of communication apparatus are classified under heading 8517.
If the diode is a part of radar equipment
Parts of radar apparatus are classified under heading 8529.
Not sure which classification is right?
The Tariff Assistant works through the GRI rules on your specific product to reach the right tariff item — and can price the duty on it in the same conversation.
Import Tips & Compliance
• Classify beam lead microwave diodes under 8541.10.00 and provide detailed technical specifications, including cutoff frequency and packaging type, to support the classification
• Since these are unpackaged die, ensure they are shipped in appropriate anti-static carriers and clearly labeled
• Work with a customs broker experienced in semiconductor classifications for high-frequency components
Related Products under Tariff item 8541.10.00
1N4007 Rectifier Diode
The 1N4007 is a standard silicon rectifier diode designed for general-purpose rectification in power supplies and chargers. It allows current to flow in one direction only, blocking reverse voltage up to 1000V, making it a classic non-photosensitive, non-LED diode.
1N4148 Switching Diode
The 1N4148 is a high-speed silicon switching diode used in signal processing, protection circuits, and high-frequency applications. It features fast switching times under 4ns, fitting tariff item 8541.10.00 as a non-photosensitive, non-LED diode.
1N4728A 3.3V Zener Diode
The 1N4728A is a 3.3V Zener diode commonly used in low-voltage reference and protection circuits for microcontrollers and sensors. It operates through the Zener breakdown mechanism, distinguishing it from other diode types. As a discrete, non-photosensitive, non-LED diode, it is classified under this tariff item.
1N4733A 5.1V Zener Diode
The 1N4733A is a 5.1V axial-lead silicon Zener diode designed for voltage regulation in electronic circuits. It operates through the Zener breakdown mechanism, making it a specific type of non-photosensitive, non-LED diode. This discrete semiconductor device is classified under this tariff item.
1N5226B 3.3V Zener Diode
1N5226B is a 3.3V 500mW Zener diode with 5% tolerance for precision voltage regulation in digital logic circuits. It operates through the Zener breakdown mechanism, classifying it as a non-photosensitive, non-LED diode. This discrete semiconductor device is classified under this tariff item.
1N751 5.6V Zener Diode
The 1N751 is a 5.6V, 400mW Zener diode ideal for stabilizing voltages in analog circuits and instrumentation. It operates through the Zener breakdown mechanism, classifying it as a non-photosensitive, non-LED diode. This discrete semiconductor device is classified under this tariff item.