Chapter 8541 — Customs Tariff Headings

8541.5Other semiconductor devices:

8541.60.00Mounted piezo-electric crystals

8541.90.00Parts

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Products classified under Tariff item 85.41

1N4007 Rectifier Diode

The 1N4007 is a standard silicon rectifier diode designed for general-purpose rectification in power supplies and chargers. It allows current to flow in one direction only, blocking reverse voltage up to 1000V, making it a classic non-photosensitive, non-LED diode.

1N4148 Switching Diode

The 1N4148 is a high-speed silicon switching diode used in signal processing, protection circuits, and high-frequency applications. It features fast switching times under 4ns, fitting tariff item 8541.10.00 as a non-photosensitive, non-LED diode.

Avalanche Diode 1N5908

The 1N5908 avalanche diode provides transient voltage suppression through controlled breakdown, protecting sensitive electronics from ESD and surges. Classified under tariff item 8541.10.00 as a protective non-photosensitive diode.

Bridge Rectifier Diode GBU4J

The GBU4J is a 4-pin silicon bridge rectifier diode rated for 600V/4A, used in AC-DC power adapters and battery chargers. It contains four diodes in one package for full-wave rectification, still classified under tariff item 8541.10.00.

Dual Series Diode BAV99

BAV99 contains two 70V/200mA switching diodes in SOT-23 package for space-constrained clamping and detection circuits. Common in portable electronics, it falls under tariff item 8541.10.00 as a non-photosensitive diode array.

Fast Recovery Epitaxial Diode (FRED) MUR1560

MUR1560 FRED diodes offer 15A/600V with 250ns recovery time for high-frequency switchers and inverters. Epitaxial construction enables soft recovery, under tariff item 8541.10.00 as a non-photosensitive diode.

Germanium Point Contact Diode OA90

The OA90 is a vintage germanium diode used in radio frequency detection and vintage electronics restoration. It offers low forward voltage for crystal radio detectors, classified under tariff item 8541.10.00 for non-photosensitive diodes.

Gun Diode (Gunn Diode) for Microwave

Gunn diodes generate microwave frequencies through negative resistance effect, used in radar, police speed guns, and motion detectors. As bulk semiconductor transfer electron devices functioning as diodes, they classify under tariff item 8541.10.00.

High Voltage Silicon Diode 2CL2512S

2CL2512S handles 25kV pulses for CRT displays and X-ray equipment. High voltage stud-mount diode under tariff item 8541.10.00 as a non-photosensitive diode.

PIN Photodiode-less Switching PIN Diode

PIN diodes feature intrinsic region for RF switching and attenuation in attenuators and phase shifters. Used in wireless infrastructure, they classify under tariff item 8541.10.00 when specified for non-photosensitive switching applications.

RF Detector Diode AA119

AA119 Schottky detector diodes for AM/FM signal detection in radio receivers. Low barrier height for sensitivity, classified under tariff item 8541.10.00 as a non-photosensitive diode.

Schottky Barrier Diode BAT54

The BAT54 is a Schottky diode with low forward voltage drop (0.3V) ideal for high-efficiency rectification in switch-mode power supplies and RF detectors. Its metal-semiconductor junction enables fast switching, placing it under tariff item 8541.10.00.

Tunnel Diode NEC JV22C

Tunnel diodes exhibit negative resistance for ultra-high frequency oscillators and amplifiers in microwave circuits. The NEC JV22C operates at 1-10GHz, classifying under tariff item 8541.10.00 for specialty semiconductor diodes.

Varicap Tuning Diode BB131

The BB131 varicap (varactor) diode varies capacitance with reverse bias voltage, used in radio tuners and voltage-controlled oscillators. As a voltage-variable capacitor diode, it falls under tariff item 8541.10.00 for non-photosensitive diodes.

Zener Diode 1N4733A

The 1N4733A is a 5.1V Zener diode used for voltage regulation and reference in power supplies and stabilizers. It maintains constant voltage across its terminals under reverse bias, qualifying under tariff item 8541.10.00 for non-photosensitive diodes.

2N3904 NPN Switching Transistor

The 2N3904 is a low-power NPN bipolar junction transistor with a maximum power dissipation of 625 milliwatts, which is below the 1-watt threshold of this tariff item. It is a non-photosensitive transistor commonly used for signal amplification and low-speed switching in audio circuits and general-purpose electronic projects. Its classification under this item is based on its dissipation rate and transistor type.

2N7000 N-Channel MOSFET Transistor

The 2N7000 is an N-channel enhancement-mode MOSFET with a maximum power dissipation of 400 milliwatts, making it a low-dissipation field-effect transistor under the 1-watt limit. It is a non-photosensitive transistor used for low-power switching in logic level converters and battery-powered circuits. This item applies to such transistors regardless of their specific semiconductor technology.

BC547 NPN Bipolar Junction Transistor

The BC547 is a general-purpose NPN bipolar junction transistor with a maximum power dissipation of 500 milliwatts, which is below the 1-watt threshold specified in this tariff item. It is a non-photosensitive transistor widely used in switching and amplification circuits. Its classification here is based on its low dissipation rate and transistor type.

BC557 PNP Complementary Transistor

The BC557 is a PNP bipolar junction transistor with a maximum power dissipation of 500 milliwatts, which is below the 1-watt limit of this tariff item. It is a non-photosensitive transistor used in low-power signal processing and as a complementary pair to NPN transistors in push-pull audio amplifiers. Its classification is based on its low dissipation and transistor type.

BFR93A NPN RF Transistor

The BFR93A is an NPN RF transistor with a maximum power dissipation of 200 milliwatts, which is well below the 1-watt threshold of this tariff item. It is a non-photosensitive transistor designed for UHF applications such as wireless modules and cable TV amplifiers. Its low dissipation rate and transistor type determine its classification here.

BS170 N-Channel FET Transistor

The BS170 is an N-channel field-effect transistor with a maximum power dissipation of 350 milliwatts, which is below the 1-watt limit of this tariff item. It is a non-photosensitive transistor used for RF amplifiers and switching in amateur radio equipment. Its classification is based on its low dissipation rate and FET type.

C945 NPN Silicon Transistor

The C945 is a low-noise NPN silicon transistor with a maximum power dissipation of 400 milliwatts, which is below the 1-watt threshold of this tariff item. It is a non-photosensitive transistor used in audio preamplifiers and hi-fi equipment. Its low dissipation rate and transistor type determine its classification here.

J310 N-Channel JFET Transistor

The J310 is an N-channel JFET transistor with a maximum power dissipation of 350 milliwatts, which is below the 1-watt limit of this tariff item. It is a non-photosensitive transistor used in RF preamplifiers and VHF/UHF receivers. Its classification is based on its low dissipation rate and junction field-effect transistor type.

KSP42 NPN Darlington Transistor

The KSP42 is an NPN Darlington transistor with a maximum power dissipation of 625 milliwatts, which is below the 1-watt threshold of this tariff item. It is a non-photosensitive transistor used for high-gain applications such as sensor interfaces and relay drivers. Its classification is based on its low dissipation rate and Darlington structure, which is treated as a single transistor unit.

MJE340 NPN High Voltage Transistor

The MJE340 is an NPN high-voltage transistor with a maximum power dissipation of 500 milliwatts, which is below the 1-watt limit of this tariff item. It is a non-photosensitive transistor used in horizontal deflection circuits in CRT displays. Despite its high voltage rating, its low dissipation rate keeps it classified under this item.

MMBT3906 PNP Surface Mount Transistor

The MMBT3906 is a surface-mount PNP transistor with a maximum power dissipation of 200 milliwatts, which is below the 1-watt threshold of this tariff item. It is a non-photosensitive transistor used in compact SMD PCB designs in smartphones and wearables. Its classification is based on its low dissipation rate and transistor type, regardless of its SOT-23 package.

MPS2222 NPN TO-18 Metal Can Transistor

The MPS2222 is an NPN transistor in a hermetic TO-18 metal can package with a maximum power dissipation of 625 milliwatts, which is below the 1-watt limit of this tariff item. It is a non-photosensitive transistor used in avionics and harsh environments due to its military-grade construction. Its classification is based on its low dissipation rate and transistor type, not its packaging.

PN2222A NPN General Purpose Transistor

The PN2222A is an NPN general-purpose transistor in a TO-92 package with a maximum power dissipation of 625 milliwatts, which is below the 1-watt threshold of this tariff item. It is a non-photosensitive transistor used for through-hole prototyping and legacy equipment repair. Its classification is based on its low dissipation rate and transistor type.

S8050 NPN Medium Power Transistor

The S8050 is an NPN medium-power transistor with a maximum power dissipation of 625 milliwatts, which is below the 1-watt limit of this tariff item. It is a non-photosensitive transistor used in audio output stages and relay drivers in consumer electronics. Its classification is based on its low dissipation rate and transistor type.

SS8050 NPN Plastic Encapsulated Transistor

The SS8050 is an NPN transistor in a TO-92 plastic package with a maximum power dissipation of 900 milliwatts, which is below the 1-watt threshold of this tariff item. It is a non-photosensitive transistor used in driver stages in switching power supplies. Its classification is based on its low dissipation rate and transistor type.

2N3904 NPN Switching Transistor

The 2N3904 is a low-power NPN silicon transistor used for switching and signal amplification in electronic circuits. It is a non-photosensitive discrete transistor, which falls under tariff item 8541.29.00 as 'Other' transistors.

2N3906 PNP Complementary Transistor

The 2N3906 is a PNP transistor that complements the 2N3904 for push-pull amplifier and switching circuits. It is a non-photosensitive discrete transistor, classified under 8541.29.00 as 'Other'.

2N5551 NPN High Voltage Switching Transistor

The 2N5551 is an NPN transistor rated for high-voltage switching in relay drivers and telecom circuits. It is a non-photosensitive discrete transistor, classified under 8541.29.00 as 'Other'.

2N7000 N-Channel MOSFET

The 2N7000 is an N-channel enhancement-mode MOSFET used for low-voltage switching in logic-level circuits. As a non-photosensitive discrete transistor, it is classified under 8541.29.00 as 'Other' transistors.

BC547 NPN Bipolar Junction Transistor

The BC547 is a general-purpose NPN bipolar junction transistor for amplification and switching in low-power circuits. It is a non-photosensitive discrete transistor, classified under 8541.29.00 as 'Other'.

BD139 Medium Power NPN Transistor

The BD139 is a medium-power NPN transistor for audio drivers and switching applications. It is a non-photosensitive discrete transistor, falling under 8541.29.00 as 'Other' transistors.

BS170 N-Channel Small Signal MOSFET

The BS170 is a small-signal N-channel MOSFET for low-power switching in RF and logic applications. It is a non-photosensitive discrete transistor, classified under 8541.29.00 as 'Other'.

C945 NPN Silicon Transistor

The C945 is an NPN epitaxial silicon transistor for audio frequency amplification and switching. It is a non-photosensitive discrete transistor, classified under 8541.29.00 as 'Other'.

IRF540N N-Channel MOSFET Transistor

The IRF540N is a power N-channel enhancement-mode MOSFET for high-current switching in motor drivers and power supplies. It is a non-photosensitive discrete transistor, classified under 8541.29.00 as 'Other'.

IRFZ44N N-Channel Power MOSFET

The IRFZ44N is an N-channel power MOSFET for high-current switching in motor controls and inverters. It is a non-photosensitive discrete transistor, classified under 8541.29.00 as 'Other'.

MJE3055 NPN High Power Transistor

The MJE3055 is a high-power NPN transistor for audio output stages and power switching. It is a non-photosensitive discrete transistor, classified under 8541.29.00 as 'Other'.

PN2222A NPN General Purpose Transistor

The PN2222A is a TO-92 package NPN transistor for switching and amplification in consumer electronics. It is a non-photosensitive discrete transistor, classified under 8541.29.00 as 'Other'.

S8050 NPN Medium Power Transistor

The S8050 is a TO-92 NPN transistor for medium-power switching in consumer electronics. It is a non-photosensitive discrete transistor, classified under 8541.29.00 as 'Other'.

TIP120 Darlington NPN Transistor

The TIP120 is a Darlington NPN power transistor with high current gain for driving relays and motors. It is a non-photosensitive discrete transistor, classified under 8541.29.00 as 'Other'.

TIP41C NPN Power Transistor

The TIP41C is a medium-power NPN bipolar transistor for audio amplifiers and power switching. It is a non-photosensitive discrete transistor, classified under 8541.29.00 as 'Other'.

1200V Silicon Triac Die

Unmounted silicon dice rated at 1200V for triac fabrication, essential for AC motor controls and lighting dimmers. These individual semiconductor chips are non-photosensitive and fall under tariff item 8541.30.00.

800A Thyristor Dice Sheet

A pre-diced sheet of 800A-rated thyristor dice on tape, used for high-current traction applications like railway and marine propulsion systems. These unmounted dice are non-photosensitive thyristors, classified under tariff item 8541.30.00.

BT136-600E Triac 600V 4A

A standard triac (triode for alternating current) in a TO-220 package, rated 600V and 4A, designed for low-power AC switching in home appliances like fans and heaters. It is a non-photosensitive triac, falling squarely under tariff item 8541.30.00.

BTA16-600B Triac 16A 600V

A snubberless triac rated 16A/600V in a TO-220AB package, used for industrial motor controls and heater regulation. Its non-photosensitive design and triac function place it under tariff item 8541.30.00.

DB3 DIAC 32V Bidirectional Trigger

A two-terminal DIAC semiconductor device rated at 32V, used for triggering triacs in dimmer circuits and motor soft-starters. It is a non-photosensitive diac, classified under tariff item 8541.30.00.

Fast-Recovery Triac Wafer

Unmounted wafers optimized for fast turn-off triacs used in SMPS and inverters, with recovery time specs under 1μs. These wafers are non-photosensitive and fall under tariff item 8541.30.00.

Gallium Nitride Diac Wafer

Unmounted GaN wafers for diac production, used in high-frequency switching circuits and surge protection devices. These wafers are non-photosensitive and fall under tariff item 8541.30.00.

High-Power Thyristor Wafer (4-inch)

4-inch unmounted silicon wafers for manufacturing high-power thyristors used in HVDC transmission systems, with thyristor-specific epitaxial layers and doping. These wafers are non-photosensitive and fall under tariff item 8541.30.00.

High-Temperature Diac Die

Unmounted diac dice rated for 175°C operation in automotive ignition systems, with high-temperature junction specs. These dice are non-photosensitive and fall under tariff item 8541.30.00.

Industrial Diac Wafer (6-inch)

6-inch silicon wafers engineered for diac production in industrial dimming and timing circuits, with symmetrical breakover voltage characteristics. These wafers are non-photosensitive and fall under tariff item 8541.30.00.

Phase-Control Thyristor Chip

Unmounted 16A phase-control thyristor chips for lighting and heating applications, with integral phase angle control. These chips are non-photosensitive and fall under tariff item 8541.30.00.

S6010L 600V 10A Sensitive Gate SCR

A high-current sensitive gate SCR thyristor rated 600V/10A in a TO-220 package, used in battery chargers and UPS systems. It is a non-photosensitive thyristor, falling under tariff item 8541.30.00.

STC3-400V 3A Thyristor Capsule

A stud-mounted capsule thyristor rated 3A/400V, designed for stud welding equipment and high-vibration applications. It is a non-photosensitive thyristor, classified under tariff item 8541.30.00.

TO-220AB Package Thyristor SCR

A silicon-controlled rectifier (SCR) thyristor in a TO-220AB through-hole package, rated at 12A and 600V, used for power control in motor drives and lighting dimmers. It is a non-photosensitive thyristor, falling under tariff item 8541.30.00.