Other
Semiconductor devices (for example, diodes, transistors, semiconductor-based transducers); photosensitive semiconductor devices, including photovoltaic cells whether or not assembled in modules or made up into panels; light-emitting diodes (LED), whether or not assembled with other light-emitting diodes (LED); mounted piezo-electric crystals. > Transistors, other than photosensitive transistors: > Other > Other
Duty Rate (from China)
Products classified under Tariff item 8541.2
2N3904 NPN RF Transistor
The 2N3904 is a general-purpose NPN silicon transistor for RF amplification and switching, with an operating frequency exceeding 100 MHz and dissipation under 1W. It is a discrete, non-photosensitive transistor.
8541.21.002N3904 NPN Switching Transistor
The 2N3904 is a low-power NPN bipolar junction transistor with a maximum power dissipation of 625 milliwatts, making it suitable for signal amplification and low-speed switching in audio circuits and hobbyist projects. As a non-photosensitive transistor with a dissipation rate below 1 watt, it falls under tariff item 8541.21.00.
8541.21.002N7000 N-Channel MOSFET Transistor
The 2N7000 is an N-channel enhancement-mode MOSFET with a maximum power dissipation of 400 milliwatts, designed for low-power switching in logic level converters and battery circuits. As a non-photosensitive field-effect transistor with dissipation under 1 watt, it is classified under tariff item 8541.21.00.
8541.21.002SC945 NPN Silicon RF Transistor
The 2SC945 NPN transistor is used in FM/AM radio IF amplifiers and oscillators, supporting frequencies above 100 MHz with dissipation below 1W. It is a discrete, low-power RF transistor.
8541.21.00Audio Output TIP42C PNP Complementary Transistor
The TIP42C PNP transistor is a complementary counterpart to the TIP31C, used in push-pull audio output stages for balanced Class AB amplifiers. When operated at under 1 W with proper heat sinking, it qualifies for classification under tariff item 8541.21.00. This product is suitable for professional audio applications requiring low-power operation.
8541.21.00Automotive Grade MOSFET Wafer
Unmounted MOSFET wafers qualified to AEC-Q101 for automotive electronic control units and sensors. Each die dissipates under 1 watt, placing these wafers in the low-power transistor category of the Customs Tariff.
8541.21.00BC337-40 NPN Audio Transistor
The BC337-40 is an NPN audio transistor with a medium current rating of 800 mA and a gain range of 400 to 625, making it suitable for audio output stages and high-gain applications. With a maximum dissipation of 625 mW, it falls under the category of transistors with a dissipation rate of less than 1 W. This product is commonly used in preamplifiers and small audio amplifiers.
8541.21.00BC547 NPN Bipolar Junction Transistor
The BC547 is a general-purpose NPN bipolar junction transistor with a maximum power dissipation of 500 milliwatts, used in switching and amplification circuits. As a non-photosensitive transistor with dissipation below 1 watt, it is classified under tariff item 8541.21.00.
8541.21.00BC557 PNP Complementary Transistor
The BC557 is a PNP bipolar junction transistor with a maximum power dissipation of 500 milliwatts, commonly paired with NPN types for push-pull audio amplifiers. As a non-photosensitive transistor with dissipation below 1 watt, it is classified under tariff item 8541.21.00.
8541.21.00BF199 NPN RF Transistor
The BF199 is a silicon NPN transistor optimized for RF amplification in VHF and UHF applications, with a dissipation rate under 1 W. It is a low-power, non-photosensitive transistor, making it eligible for classification under tariff item 8541.21.00. This product is commonly used in radio receivers and other RF communication devices.
8541.21.00BF199 UHF Silicon NPN Transistor
The BF199 is a silicon NPN transistor for UHF applications like TV tuners and RF amplifiers, operating above 100 MHz with dissipation less than 1W. It is a discrete, non-photosensitive transistor.
8541.21.00BFR93A NPN RF Transistor
The BFR93A is an NPN RF transistor with a maximum power dissipation of 200 milliwatts, designed for UHF applications in wireless modules and cable TV amplifiers. As a non-photosensitive transistor with dissipation below 1 watt, it is classified under tariff item 8541.21.00.
8541.21.00Bipolar Junction Transistor Wafer for IoT Devices
An 8-inch silicon wafer with unmounted BJT chips for IoT sensors and controllers, each dissipating under 1 watt. These are discrete transistor dice, not yet assembled into finished components.
8541.21.00BS170 N-Channel FET Transistor
The BS170 is an N-channel field-effect transistor with a maximum power dissipation of 350 milliwatts, used for RF amplifiers and switching in amateur radio equipment. As a non-photosensitive transistor with dissipation below 1 watt, it is classified under tariff item 8541.21.00.
8541.21.00C945 NPN Silicon Transistor
The C945 is a low-noise NPN silicon transistor with a maximum power dissipation of 400 milliwatts, used in audio preamplifiers and hi-fi equipment. As a non-photosensitive transistor with dissipation below 1 watt, it is classified under tariff item 8541.21.00.
8541.21.00Darlington 2SD882 NPN Transistor
The Darlington 2SD882 is a high-current NPN transistor pair in a single package, offering a gain (hFE) greater than 2000. It is designed for low-power applications such as motor drivers and solenoid control, with a dissipation rate under 1 W. This composite structure qualifies it as a transistor with a dissipation rate of less than 1 W under tariff item 8541.21.00.
8541.21.00Darlington Transistor Chip Array Wafer
A silicon wafer containing unmounted Darlington transistor pair chips for high-current switching, with total dissipation under 1 watt. These composite transistor structures provide high current gain in a single chip.
8541.21.00GaAs RF Transistor Die
Gallium Arsenide (GaAs) transistor dice for RF applications in wireless devices, with dissipation under 1 watt. These unmounted chips are designed for cell phones and WiFi modules requiring high-frequency performance.
8541.21.00GaN Small Signal HEMT Transistor
The GaN Small Signal HEMT is a Gallium Nitride High Electron Mobility Transistor designed for microwave frequencies in 5G base stations and radar systems, with a dissipation rate under 1 W. As an advanced compound semiconductor device, it qualifies as a low-power transistor under tariff item 8541.21.00. This product offers superior power density and efficiency for high-frequency applications.
8541.21.00J310 N-Channel JFET RF Transistor
The J310 is an N-channel JFET transistor for RF preamplifiers and converters, with frequency response over 100 MHz and low dissipation under 1W. It is a discrete, low-power field-effect transistor.
8541.21.00J310 N-Channel JFET Transistor
The J310 is an N-channel JFET transistor with a maximum power dissipation of 350 milliwatts, designed for RF preamplifiers in VHF/UHF receivers. As a non-photosensitive transistor with dissipation below 1 watt, it is classified under tariff item 8541.21.00.
8541.21.00JAN2N2222A Military Grade Transistor
The JAN2N2222A is a military-grade version of the 2N2222 transistor, with an extended temperature range of -65°C to 200°C and guaranteed parameters for avionics and defense applications. With a dissipation rate under 1 W, it qualifies for classification under tariff item 8541.21.00. This product meets MIL-SPEC requirements and is listed on the Qualified Parts List (QPL).
8541.21.00JFET 2N3819 N-Channel Transistor
The 2N3819 is a high-frequency N-channel JFET transistor for RF preamplifiers and choppers with dissipation under 1W. It is a discrete, non-photosensitive field-effect transistor.
8541.21.00KSP42 NPN Darlington Transistor
The KSP42 is a high-gain NPN Darlington transistor with a maximum power dissipation of 625 milliwatts, used for sensor interfaces and relay drivers. As a non-photosensitive transistor with dissipation below 1 watt, it is classified under tariff item 8541.21.00.
8541.21.00Low-Noise Amplifier Transistor Chip
Unmounted silicon chips of low-noise transistors for audio and RF preamplifiers, with dissipation under 1 watt. These are used in hearing aids and professional audio equipment requiring minimal signal distortion.
8541.21.00Low Noise BC549 NPN Transistor
The BC549C is a low-noise NPN transistor specifically engineered for audio preamplifiers and sensor interfaces, with a dissipation of 500 mW. Its ultra-low 1/f noise characteristics make it ideal for precision measurement equipment. This product qualifies as a transistor with a dissipation rate of less than 1 W under tariff item 8541.21.00.
8541.21.00MJE340 NPN High Voltage Transistor
The MJE340 is an NPN high-voltage transistor with a maximum power dissipation of 500 milliwatts, used for horizontal deflection in CRT displays. Despite its high voltage rating, its low dissipation rate keeps it under tariff item 8541.21.00.
8541.21.00MMBT3904 Surface Mount NPN Transistor
The MMBT3904 is a surface-mount NPN transistor in a SOT-23 package, offering the same electrical characteristics as the 2N3904 with a dissipation rate under 1 W. It is designed for space-constrained PCB designs in smartphones, wearables, and other compact electronics. This product is classified as a low-power discrete transistor under tariff item 8541.21.00.
8541.21.00MMBT3906 PNP Surface Mount Transistor
The MMBT3906 is a surface-mount PNP transistor with a maximum power dissipation of 200 milliwatts, designed for compact SMD PCB designs in smartphones and wearables. As a non-photosensitive transistor with dissipation below 1 watt, it is classified under tariff item 8541.21.00.
8541.21.00MOSFET Driver Wafer
A silicon wafer containing unmounted MOSFET driver transistor chips for low-power switching in power management ICs, with dissipation below 1 watt. These are discrete transistors, not yet integrated into larger circuits.
8541.21.00MPS2222 NPN TO-18 Metal Can Transistor
The MPS2222 is a military-grade NPN transistor in a hermetic TO-18 metal can with a maximum power dissipation of 625 milliwatts, used in avionics and harsh environments. As a non-photosensitive transistor with dissipation below 1 watt, it is classified under tariff item 8541.21.00.
8541.21.00MPSH10 NPN Silicon High-Frequency Transistor
The MPSH10 is a high-frequency NPN silicon transistor for VHF/UHF applications in scanners and receivers, with fT over 100 MHz and dissipation under 1W. It is a discrete, low-power RF transistor.
8541.21.00PN2222A NPN General Purpose Transistor
The PN2222A is a TO-92 packaged NPN transistor with a maximum power dissipation of 625 milliwatts, used for through-hole prototyping and legacy equipment repair. As a non-photosensitive transistor with dissipation below 1 watt, it is classified under tariff item 8541.21.00.
8541.21.00S8050 NPN Medium Power RF Transistor
The S8050 NPN transistor supports RF switching and amplification up to 150 MHz with dissipation under 1W, used in wireless modules. It is a discrete, low-power transistor.
8541.21.00S8050 NPN Medium Power Transistor
The S8050 is an NPN transistor with a maximum power dissipation of 625 milliwatts, used for audio output stages and relay drivers in consumer electronics. As a non-photosensitive transistor with dissipation below 1 watt, it is classified under tariff item 8541.21.00.
8541.21.00SiC Small Signal Transistor
The SiC Small Signal Transistor is a Silicon Carbide NPN transistor designed for high-temperature switching applications up to 225°C, with a dissipation rate under 1 W. As a wide bandgap semiconductor, it offers superior performance in harsh environments. This product qualifies for classification under tariff item 8541.21.00 as a low-power transistor.
8541.21.00SiGe HBT Transistor Die
Silicon-Germanium (SiGe) Heterojunction Bipolar Transistor dice for high-frequency 5G base station applications, unmounted with under 1W dissipation. These offer superior high-frequency performance for advanced communications.
8541.21.00Silicon NPN Power Transistor Wafer
Thin silicon wafers containing thousands of unmounted NPN bipolar junction transistor dice, designed for dissipation under 1W. These are used in consumer electronics like smartphones and audio amplifiers.
8541.21.00SS8050 NPN Plastic Encapsulated Transistor
The SS8050 is a TO-92 plastic NPN transistor with a maximum power dissipation of 900 milliwatts, used for driver stages in switching power supplies. As a non-photosensitive transistor with dissipation below 1 watt, it is classified under tariff item 8541.21.00.
8541.21.00TIP31C NPN Power Transistor (Low Power Variant)
The TIP31C NPN Power Transistor, in a low-power variant, is configured for operation under 1 W in linear voltage regulators and current sources. Despite its power transistor appearance, its electrical specifications qualify it for classification under tariff item 8541.21.00. This product is used in applications where heat sinking limits power to under 1 W.
8541.29.002N3866 NPN RF Power Transistor
The 2N3866 is a silicon NPN transistor designed for RF power amplification in the 30-500 MHz range, commonly used in military and commercial VHF equipment. Because it operates at frequencies above 30 MHz, it is classified under tariff item 8541.29.00 as a transistor other than photosensitive.
8541.29.002N3904 NPN Switching Transistor
The 2N3904 is a low-power NPN silicon transistor used for switching and signal amplification in a wide range of electronic circuits. It is a non-photosensitive transistor, which places it under tariff item 8541.29.00 for other transistors.
8541.29.002N3906 PNP Complementary Transistor
The 2N3906 is a PNP transistor used as a complementary pair to the 2N3904 in push-pull amplifier circuits and switching applications. It is a non-photosensitive transistor, so it is classified under tariff item 8541.29.00 for other transistors.
8541.29.002N5551 NPN High Voltage Switching Transistor
The 2N5551 is an NPN transistor rated 160V for high-voltage switching in relay drivers and telecom circuits. As a non-photosensitive transistor, it falls under tariff item 8541.29.00 for other transistors.
8541.29.002N7000 N-Channel MOSFET
The 2N7000 is an N-channel enhancement-mode MOSFET used for low-voltage switching in USB circuits, relays, and logic-level applications. As a non-photosensitive transistor, it falls under tariff item 8541.29.00 for other transistors.
8541.29.002SC3356 NPN Silicon VHF Transistor
The 2SC3356 is a high-voltage NPN transistor for VHF television tuners and FM receivers, operating in the 30-500 MHz range. It is a standard component in consumer broadcast tuners. As a non-photosensitive transistor operating above 30 MHz, it falls under tariff item 8541.29.00.
8541.29.002SC4081 NPN Silicon UHF Transistor
The 2SC4081 is a low-noise NPN transistor for UHF cordless phones and wireless microphones, operating in the 400-470 MHz range. It is standard in professional audio equipment. As a non-photosensitive transistor operating above 30 MHz, it is classified under tariff item 8541.29.00.
8541.29.002SC5785 NPN Silicon RF Transistor
The 2SC5785 is an NPN epitaxial silicon transistor designed for high-frequency RF amplifier applications in VHF/UHF bands, with an operating frequency up to 520 MHz. It is a non-photosensitive transistor operating above 30 MHz, so it is classified under tariff item 8541.29.00.
8541.29.00BC337-40 NPN Medium Power Transistor
The BC337-40 is an NPN medium power transistor designed for medium current switching and driver applications in control circuits operating below 30 MHz. It is commonly used in automotive and industrial control boards. As a transistor other than photosensitive, it falls under tariff item 8541.29.00 for semiconductor devices.
8541.29.00BC547 NPN Bipolar Junction Transistor
The BC547 is a general-purpose NPN bipolar junction transistor used for amplification and switching in electronic circuits. It is a non-photosensitive transistor, so it is classified under tariff item 8541.29.00 for other transistors.
8541.29.00BD139 Medium Power NPN Transistor
The BD139 is a medium-power NPN transistor used in audio drivers and switching applications. It is a non-photosensitive transistor, placing it under tariff item 8541.29.00 for other transistors.
8541.29.00BFG520W NPN Silicon Microwave Transistor
The BFG520W is a double-poly NPN silicon RF transistor for microwave applications up to 5 GHz, used in base station amplifiers and wireless infrastructure. It operates above 30 MHz and is non-photosensitive, so it is classified under tariff item 8541.29.00.
8541.29.00BiCMOS Transistor Wafer
A BiCMOS transistor wafer combining bipolar and CMOS technologies for mixed-signal analog-digital interfaces. These unmounted chips are classified as semiconductor devices under tariff item 8541.29.00, which covers transistors other than photosensitive types.
8541.29.00Bipolar Junction Transistor Test Wafer
A silicon test wafer with monitor BJT structures used for semiconductor process control and yield monitoring. These unmounted transistor wafers are classified under tariff item 8541.29.00 as non-photosensitive transistors, even though they are not intended for end-use products.
8541.29.00BS170 N-Channel Small Signal MOSFET
The BS170 is a small-signal N-channel MOSFET used for low-power switching in RF and logic applications. As a non-photosensitive transistor, it falls under tariff item 8541.29.00 for other transistors.
8541.29.00C945 NPN Silicon Transistor
The C945 is an NPN epitaxial silicon transistor used for audio frequency applications and switching. It is a non-photosensitive transistor, so it is classified under tariff item 8541.29.00 for other transistors.
8541.29.00Darlington Transistor Wafer Array
A silicon wafer containing Darlington paired transistor arrays designed for high-gain switching applications. These unmounted transistor wafers are classified under tariff item 8541.29.00 as other transistors, since Darlington pairs are a type of bipolar transistor.
8541.29.00Gallium Arsenide RF Transistor Die
Unmounted gallium arsenide (GaAs) chips or dice designed for high-frequency RF transistors used in wireless communication base stations. These unmounted transistor dice are classified under tariff item 8541.29.00 as non-photosensitive transistors, with high-electron-mobility properties for RF amplification.
8541.29.00GaN HEMT Transistor Die on Wafer
Gallium Nitride High Electron Mobility Transistor (GaN HEMT) dice on a 6-inch wafer for radar and satellite amplifiers. These unmounted RF transistor chips are classified under tariff item 8541.29.00 as other transistors, critical for high-power RF applications in defense and aerospace.
8541.29.00IGBT Silicon Wafer for Motor Drives
An Insulated Gate Bipolar Transistor (IGBT) wafer for industrial motor controls and traction systems. These unmounted power transistor wafers are classified under tariff item 8541.29.00, offering high current handling for frequency converters.