MMBT3906 PNP Surface Mount Transistor
The MMBT3906 is a surface-mount PNP transistor with a maximum power dissipation of 200 milliwatts, which is below the 1-watt threshold of this tariff item. It is a non-photosensitive transistor used in compact SMD PCB designs in smartphones and wearables. Its classification is based on its low dissipation rate and transistor type, regardless of its SOT-23 package.
Import Duty Rates by Country of Origin
| Origin Country | MFN Tariff | Surtaxes | Total Effective Rate |
|---|---|---|---|
| π¨π³China | Free | β | Free |
| π²π½Mexico | Free | β | Free |
| πΊπΈUnited States | Free | β | Free |
| π©πͺGermany | Free | β | Free |
| π―π΅Japan | Free | β | Free |
More Specific Codes
This product may fall under a more specific subheading:
Alternative Classifications
This product could be classified differently depending on its characteristics or intended use.
If the transistor has a dissipation rate of 1 W or more
This sibling item covers transistors with higher dissipation.
Not sure which classification is right?
The Tariff Assistant works through the GRI rules on your specific product to reach the right tariff item β and can price the duty on it in the same conversation.
Import Tips & Compliance
β’ Document the dissipation rate (200 mW) on the commercial invoice to support classification under this item
β’ Provide the datasheet to confirm the non-photosensitive nature of the transistor
β’ Ensure the packaging type (SOT-23) is clearly described for customs purposes
Related Products under Tariff item 8541.21.00
2N3904 NPN Switching Transistor
The 2N3904 is a low-power NPN bipolar junction transistor with a maximum power dissipation of 625 milliwatts, which is below the 1-watt threshold of this tariff item. It is a non-photosensitive transistor commonly used for signal amplification and low-speed switching in audio circuits and general-purpose electronic projects. Its classification under this item is based on its dissipation rate and transistor type.
2N7000 N-Channel MOSFET Transistor
The 2N7000 is an N-channel enhancement-mode MOSFET with a maximum power dissipation of 400 milliwatts, making it a low-dissipation field-effect transistor under the 1-watt limit. It is a non-photosensitive transistor used for low-power switching in logic level converters and battery-powered circuits. This item applies to such transistors regardless of their specific semiconductor technology.
BC547 NPN Bipolar Junction Transistor
The BC547 is a general-purpose NPN bipolar junction transistor with a maximum power dissipation of 500 milliwatts, which is below the 1-watt threshold specified in this tariff item. It is a non-photosensitive transistor widely used in switching and amplification circuits. Its classification here is based on its low dissipation rate and transistor type.
BC557 PNP Complementary Transistor
The BC557 is a PNP bipolar junction transistor with a maximum power dissipation of 500 milliwatts, which is below the 1-watt limit of this tariff item. It is a non-photosensitive transistor used in low-power signal processing and as a complementary pair to NPN transistors in push-pull audio amplifiers. Its classification is based on its low dissipation and transistor type.
BFR93A NPN RF Transistor
The BFR93A is an NPN RF transistor with a maximum power dissipation of 200 milliwatts, which is well below the 1-watt threshold of this tariff item. It is a non-photosensitive transistor designed for UHF applications such as wireless modules and cable TV amplifiers. Its low dissipation rate and transistor type determine its classification here.
BS170 N-Channel FET Transistor
The BS170 is an N-channel field-effect transistor with a maximum power dissipation of 350 milliwatts, which is below the 1-watt limit of this tariff item. It is a non-photosensitive transistor used for RF amplifiers and switching in amateur radio equipment. Its classification is based on its low dissipation rate and FET type.