Other
Semiconductor devices (for example, diodes, transistors, semiconductor-based transducers); photosensitive semiconductor devices, including photovoltaic cells whether or not assembled in modules or made up into panels; light-emitting diodes (LED), whether or not assembled with other light-emitting diodes (LED); mounted piezo-electric crystals. > Transistors, other than photosensitive transistors: > Other > Other
Duty Rate (from China)
Subheadings
Products classified under Tariff item 8541.29.00
2N3866 NPN RF Power Transistor
The 2N3866 is a silicon NPN transistor designed for RF power amplification in the 30-500 MHz range, commonly used in military and commercial VHF equipment. Because it operates at frequencies above 30 MHz, it is classified under tariff item 8541.29.00 as a transistor other than photosensitive.
2N3904 NPN Switching Transistor
The 2N3904 is a low-power NPN silicon transistor used for switching and signal amplification in a wide range of electronic circuits. It is a non-photosensitive transistor, which places it under tariff item 8541.29.00 for other transistors.
2N3906 PNP Complementary Transistor
The 2N3906 is a PNP transistor used as a complementary pair to the 2N3904 in push-pull amplifier circuits and switching applications. It is a non-photosensitive transistor, so it is classified under tariff item 8541.29.00 for other transistors.
2N5551 NPN High Voltage Switching Transistor
The 2N5551 is an NPN transistor rated 160V for high-voltage switching in relay drivers and telecom circuits. As a non-photosensitive transistor, it falls under tariff item 8541.29.00 for other transistors.
2N7000 N-Channel MOSFET
The 2N7000 is an N-channel enhancement-mode MOSFET used for low-voltage switching in USB circuits, relays, and logic-level applications. As a non-photosensitive transistor, it falls under tariff item 8541.29.00 for other transistors.
2SC3356 NPN Silicon VHF Transistor
The 2SC3356 is a high-voltage NPN transistor for VHF television tuners and FM receivers, operating in the 30-500 MHz range. It is a standard component in consumer broadcast tuners. As a non-photosensitive transistor operating above 30 MHz, it falls under tariff item 8541.29.00.
2SC4081 NPN Silicon UHF Transistor
The 2SC4081 is a low-noise NPN transistor for UHF cordless phones and wireless microphones, operating in the 400-470 MHz range. It is standard in professional audio equipment. As a non-photosensitive transistor operating above 30 MHz, it is classified under tariff item 8541.29.00.
2SC5785 NPN Silicon RF Transistor
The 2SC5785 is an NPN epitaxial silicon transistor designed for high-frequency RF amplifier applications in VHF/UHF bands, with an operating frequency up to 520 MHz. It is a non-photosensitive transistor operating above 30 MHz, so it is classified under tariff item 8541.29.00.
BC337-40 NPN Medium Power Transistor
The BC337-40 is an NPN medium power transistor designed for medium current switching and driver applications in control circuits operating below 30 MHz. It is commonly used in automotive and industrial control boards. As a transistor other than photosensitive, it falls under tariff item 8541.29.00 for semiconductor devices.
BC547 NPN Bipolar Junction Transistor
The BC547 is a general-purpose NPN bipolar junction transistor used for amplification and switching in electronic circuits. It is a non-photosensitive transistor, so it is classified under tariff item 8541.29.00 for other transistors.
BD139 Medium Power NPN Transistor
The BD139 is a medium-power NPN transistor used in audio drivers and switching applications. It is a non-photosensitive transistor, placing it under tariff item 8541.29.00 for other transistors.
BFG520W NPN Silicon Microwave Transistor
The BFG520W is a double-poly NPN silicon RF transistor for microwave applications up to 5 GHz, used in base station amplifiers and wireless infrastructure. It operates above 30 MHz and is non-photosensitive, so it is classified under tariff item 8541.29.00.
BiCMOS Transistor Wafer
A BiCMOS transistor wafer combining bipolar and CMOS technologies for mixed-signal analog-digital interfaces. These unmounted chips are classified as semiconductor devices under tariff item 8541.29.00, which covers transistors other than photosensitive types.
Bipolar Junction Transistor Test Wafer
A silicon test wafer with monitor BJT structures used for semiconductor process control and yield monitoring. These unmounted transistor wafers are classified under tariff item 8541.29.00 as non-photosensitive transistors, even though they are not intended for end-use products.
BS170 N-Channel Small Signal MOSFET
The BS170 is a small-signal N-channel MOSFET used for low-power switching in RF and logic applications. As a non-photosensitive transistor, it falls under tariff item 8541.29.00 for other transistors.
C945 NPN Silicon Transistor
The C945 is an NPN epitaxial silicon transistor used for audio frequency applications and switching. It is a non-photosensitive transistor, so it is classified under tariff item 8541.29.00 for other transistors.
Darlington Transistor Wafer Array
A silicon wafer containing Darlington paired transistor arrays designed for high-gain switching applications. These unmounted transistor wafers are classified under tariff item 8541.29.00 as other transistors, since Darlington pairs are a type of bipolar transistor.
Gallium Arsenide RF Transistor Die
Unmounted gallium arsenide (GaAs) chips or dice designed for high-frequency RF transistors used in wireless communication base stations. These unmounted transistor dice are classified under tariff item 8541.29.00 as non-photosensitive transistors, with high-electron-mobility properties for RF amplification.
GaN HEMT Transistor Die on Wafer
Gallium Nitride High Electron Mobility Transistor (GaN HEMT) dice on a 6-inch wafer for radar and satellite amplifiers. These unmounted RF transistor chips are classified under tariff item 8541.29.00 as other transistors, critical for high-power RF applications in defense and aerospace.
IGBT Silicon Wafer for Motor Drives
An Insulated Gate Bipolar Transistor (IGBT) wafer for industrial motor controls and traction systems. These unmounted power transistor wafers are classified under tariff item 8541.29.00, offering high current handling for frequency converters.
IRF540N N-Channel MOSFET Transistor
The IRF540N is a power N-channel enhancement-mode MOSFET rated for 100V/33A switching applications. As a non-photosensitive transistor, it falls under tariff item 8541.29.00 for other transistors.
IRFZ44N N-Channel Power MOSFET
The IRFZ44N is a 55V/49A N-channel MOSFET for high-current switching in motor controls and inverters. It is a non-photosensitive transistor, placing it under tariff item 8541.29.00 for other transistors.
LDMOS RF Power Transistor Wafer
A Laterally Diffused Metal Oxide Semiconductor (LDMOS) wafer for broadcast transmitters, providing high-power RF amplification. These unmounted wafers are classified under tariff item 8541.29.00 as non-photosensitive transistors for RF power applications.
MJE3055 NPN High Power Transistor
The MJE3055 is a high-power NPN transistor (60V/15A) for audio output stages and power switching. As a non-photosensitive transistor, it falls under tariff item 8541.29.00 for other transistors.
MOSFET Silicon Wafer for Power Electronics
A 300mm silicon wafer with fabricated MOSFET transistor arrays for electric vehicle inverters and power supplies. These unmounted wafers are classified under tariff item 8541.29.00 as non-photosensitive transistors, representing intermediate semiconductor goods.
PN2222A NPN General Purpose Transistor
The PN2222A is a TO-92 package NPN transistor for switching and amplification up to 40V/800mA. It is a non-photosensitive transistor, so it is classified under tariff item 8541.29.00 for other transistors.
Power LDMOS Wafer for Base Stations
A laterally diffused power LDMOS wafer for cellular base stations, providing RF power amplification. These unmounted wafers are classified under tariff item 8541.29.00 as non-photosensitive transistors for telecommunications infrastructure.
RF Silicon Wafer with Multiple Transistor Types
A multi-project silicon wafer containing various RF transistor test structures for research and development. These unmounted wafers are classified under tariff item 8541.29.00 as non-photosensitive transistors, used for prototyping and testing.
S8050 NPN Medium Power Transistor
The S8050 is a TO-92 NPN transistor (20V/1.5A) popular in cost-sensitive switching applications. As a non-photosensitive transistor, it falls under tariff item 8541.29.00 for other transistors.
S8050 NPN Plastic Package Transistor
The S8050 is an NPN transistor in a TO-92 plastic package, used for general-purpose amplification and switching in consumer electronics operating below 30 MHz. It is a cost-effective solution for low-power applications. As a non-photosensitive transistor, it is classified under tariff item 8541.29.00.
SiC Power Transistor Wafer
A 4-inch silicon carbide (SiC) wafer with power MOSFET transistor cells for high-voltage applications like solar inverters. These unmounted wafers are classified under tariff item 8541.29.00, offering superior thermal performance for power electronics.
Silicon Carbide JFET Wafer
A Silicon Carbide Junction Field Effect Transistor (SiC JFET) wafer for high-temperature sensing applications. These unmounted wafers are classified under tariff item 8541.29.00 as non-photosensitive transistors, designed for extreme environment operation.
Silicon Germanium HBT Wafer
A Silicon Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) wafer for high-speed analog ICs in telecom handsets. These unmounted wafers are classified under tariff item 8541.29.00 as non-photosensitive transistors, enabling low-noise amplification at mmWave frequencies.
Silicon NPN Power Transistor Wafer
An unmounted silicon wafer containing thousands of NPN bipolar junction transistor dice for power amplification circuits in automotive and industrial applications. These wafers are classified under tariff item 8541.29.00 as non-photosensitive transistors.
SOI MOSFET Transistor Wafer
A Silicon-On-Insulator (SOI) MOSFET transistor wafer designed for radiation-hardened electronics. These unmounted wafers are classified under tariff item 8541.29.00 as non-photosensitive transistors, offering resistance to radiation for aerospace applications.
TIP120 Darlington NPN Transistor
The TIP120 is a Darlington NPN power transistor (60V/5A) with high current gain for driving relays and motors. It is a non-photosensitive transistor, placing it under tariff item 8541.29.00 for other transistors.
TIP41C NPN Power Transistor
The TIP41C is a medium-power NPN bipolar transistor for audio amplifiers and power switching up to 100V/6A. As a non-photosensitive transistor, it falls under tariff item 8541.29.00 for other transistors.
TIP42C PNP Power Darlington Transistor
The TIP42C is a PNP Darlington transistor providing high current gain for power switching in audio output stages and motor drivers, operating below 30 MHz. It comes in a TO-220 package suitable for heat sinking. As a non-photosensitive transistor, it is classified under tariff item 8541.29.00.