With a dissipation rate of less than 1 W
Parts suitable for use solely or principally with the apparatus of heading 85.35, 85.36 or 85.37. > Transistors, other than photosensitive transistors: > With a dissipation rate of less than 1 W > With a dissipation rate of less than 1 W
Duty Rate (from China)
Products classified under Tariff item 8541.21.00
2N3904 NPN Switching Transistor
The 2N3904 is a low-power NPN bipolar junction transistor with a maximum power dissipation of 625 milliwatts, which is below the 1-watt threshold of this tariff item. It is a non-photosensitive transistor commonly used for signal amplification and low-speed switching in audio circuits and general-purpose electronic projects. Its classification under this item is based on its dissipation rate and transistor type.
2N7000 N-Channel MOSFET Transistor
The 2N7000 is an N-channel enhancement-mode MOSFET with a maximum power dissipation of 400 milliwatts, making it a low-dissipation field-effect transistor under the 1-watt limit. It is a non-photosensitive transistor used for low-power switching in logic level converters and battery-powered circuits. This item applies to such transistors regardless of their specific semiconductor technology.
BC547 NPN Bipolar Junction Transistor
The BC547 is a general-purpose NPN bipolar junction transistor with a maximum power dissipation of 500 milliwatts, which is below the 1-watt threshold specified in this tariff item. It is a non-photosensitive transistor widely used in switching and amplification circuits. Its classification here is based on its low dissipation rate and transistor type.
BC557 PNP Complementary Transistor
The BC557 is a PNP bipolar junction transistor with a maximum power dissipation of 500 milliwatts, which is below the 1-watt limit of this tariff item. It is a non-photosensitive transistor used in low-power signal processing and as a complementary pair to NPN transistors in push-pull audio amplifiers. Its classification is based on its low dissipation and transistor type.
BFR93A NPN RF Transistor
The BFR93A is an NPN RF transistor with a maximum power dissipation of 200 milliwatts, which is well below the 1-watt threshold of this tariff item. It is a non-photosensitive transistor designed for UHF applications such as wireless modules and cable TV amplifiers. Its low dissipation rate and transistor type determine its classification here.
BS170 N-Channel FET Transistor
The BS170 is an N-channel field-effect transistor with a maximum power dissipation of 350 milliwatts, which is below the 1-watt limit of this tariff item. It is a non-photosensitive transistor used for RF amplifiers and switching in amateur radio equipment. Its classification is based on its low dissipation rate and FET type.
C945 NPN Silicon Transistor
The C945 is a low-noise NPN silicon transistor with a maximum power dissipation of 400 milliwatts, which is below the 1-watt threshold of this tariff item. It is a non-photosensitive transistor used in audio preamplifiers and hi-fi equipment. Its low dissipation rate and transistor type determine its classification here.
J310 N-Channel JFET Transistor
The J310 is an N-channel JFET transistor with a maximum power dissipation of 350 milliwatts, which is below the 1-watt limit of this tariff item. It is a non-photosensitive transistor used in RF preamplifiers and VHF/UHF receivers. Its classification is based on its low dissipation rate and junction field-effect transistor type.
KSP42 NPN Darlington Transistor
The KSP42 is an NPN Darlington transistor with a maximum power dissipation of 625 milliwatts, which is below the 1-watt threshold of this tariff item. It is a non-photosensitive transistor used for high-gain applications such as sensor interfaces and relay drivers. Its classification is based on its low dissipation rate and Darlington structure, which is treated as a single transistor unit.
MJE340 NPN High Voltage Transistor
The MJE340 is an NPN high-voltage transistor with a maximum power dissipation of 500 milliwatts, which is below the 1-watt limit of this tariff item. It is a non-photosensitive transistor used in horizontal deflection circuits in CRT displays. Despite its high voltage rating, its low dissipation rate keeps it classified under this item.
MMBT3906 PNP Surface Mount Transistor
The MMBT3906 is a surface-mount PNP transistor with a maximum power dissipation of 200 milliwatts, which is below the 1-watt threshold of this tariff item. It is a non-photosensitive transistor used in compact SMD PCB designs in smartphones and wearables. Its classification is based on its low dissipation rate and transistor type, regardless of its SOT-23 package.
MPS2222 NPN TO-18 Metal Can Transistor
The MPS2222 is an NPN transistor in a hermetic TO-18 metal can package with a maximum power dissipation of 625 milliwatts, which is below the 1-watt limit of this tariff item. It is a non-photosensitive transistor used in avionics and harsh environments due to its military-grade construction. Its classification is based on its low dissipation rate and transistor type, not its packaging.
PN2222A NPN General Purpose Transistor
The PN2222A is an NPN general-purpose transistor in a TO-92 package with a maximum power dissipation of 625 milliwatts, which is below the 1-watt threshold of this tariff item. It is a non-photosensitive transistor used for through-hole prototyping and legacy equipment repair. Its classification is based on its low dissipation rate and transistor type.
S8050 NPN Medium Power Transistor
The S8050 is an NPN medium-power transistor with a maximum power dissipation of 625 milliwatts, which is below the 1-watt limit of this tariff item. It is a non-photosensitive transistor used in audio output stages and relay drivers in consumer electronics. Its classification is based on its low dissipation rate and transistor type.
SS8050 NPN Plastic Encapsulated Transistor
The SS8050 is an NPN transistor in a TO-92 plastic package with a maximum power dissipation of 900 milliwatts, which is below the 1-watt threshold of this tariff item. It is a non-photosensitive transistor used in driver stages in switching power supplies. Its classification is based on its low dissipation rate and transistor type.