Darlington 2SD882 NPN Transistor
The Darlington 2SD882 is a high-current NPN transistor pair in a single package, offering a gain (hFE) greater than 2000. It is designed for low-power applications such as motor drivers and solenoid control, with a dissipation rate under 1 W. This composite structure qualifies it as a transistor with a dissipation rate of less than 1 W under tariff item 8541.21.00.
Import Duty Rates by Country of Origin
| Origin Country | MFN Tariff | Surtaxes | Total Effective Rate |
|---|---|---|---|
| π¨π³China | Free | β | Free |
| π²π½Mexico | Free | β | Free |
| πΊπΈUnited States | Free | β | Free |
| π©πͺGermany | Free | β | Free |
| π―π΅Japan | Free | β | Free |
More Specific Codes
This product may fall under a more specific subheading:
Alternative Classifications
This product could be classified differently depending on its characteristics or intended use.
If the transistor has a dissipation rate of 1 W or more
This subheading covers transistors with higher dissipation rates, which would apply if the product's specifications differ.
If the transistor is integrated into a processor or controller chip
Electronic integrated circuits as processors and controllers are classified under 8542, which may apply if the component is more complex than a discrete transistor.
Not sure which classification is right?
The Tariff Assistant works through the GRI rules on your specific product to reach the right tariff item β and can price the duty on it in the same conversation.
Import Tips & Compliance
β’ Ensure the transistor's dissipation rate is clearly documented as under 1 W to support classification under 8541.21.00
β’ Provide the manufacturer's datasheet with the commercial invoice to assist CBSA officers in verifying the product's specifications
β’ If the transistor is part of a larger assembly, confirm whether it should be classified separately or with the finished product
Related Products under Tariff item 8541.21.00
2N3904 NPN RF Transistor
The 2N3904 is a general-purpose NPN silicon transistor for RF amplification and switching, with an operating frequency exceeding 100 MHz and dissipation under 1W. It is a discrete, non-photosensitive transistor.
2N3904 NPN Switching Transistor
The 2N3904 is a low-power NPN bipolar junction transistor with a maximum power dissipation of 625 milliwatts, making it suitable for signal amplification and low-speed switching in audio circuits and hobbyist projects. As a non-photosensitive transistor with a dissipation rate below 1 watt, it falls under tariff item 8541.21.00.
2N7000 N-Channel MOSFET Transistor
The 2N7000 is an N-channel enhancement-mode MOSFET with a maximum power dissipation of 400 milliwatts, designed for low-power switching in logic level converters and battery circuits. As a non-photosensitive field-effect transistor with dissipation under 1 watt, it is classified under tariff item 8541.21.00.
2SC945 NPN Silicon RF Transistor
The 2SC945 NPN transistor is used in FM/AM radio IF amplifiers and oscillators, supporting frequencies above 100 MHz with dissipation below 1W. It is a discrete, low-power RF transistor.
Audio Output TIP42C PNP Complementary Transistor
The TIP42C PNP transistor is a complementary counterpart to the TIP31C, used in push-pull audio output stages for balanced Class AB amplifiers. When operated at under 1 W with proper heat sinking, it qualifies for classification under tariff item 8541.21.00. This product is suitable for professional audio applications requiring low-power operation.
Automotive Grade MOSFET Wafer
Unmounted MOSFET wafers qualified to AEC-Q101 for automotive electronic control units and sensors. Each die dissipates under 1 watt, placing these wafers in the low-power transistor category of the Customs Tariff.