SiC Small Signal Transistor
The SiC Small Signal Transistor is a Silicon Carbide NPN transistor designed for high-temperature switching applications up to 225°C, with a dissipation rate under 1 W. As a wide bandgap semiconductor, it offers superior performance in harsh environments. This product qualifies for classification under tariff item 8541.21.00 as a low-power transistor.
Import Duty Rates by Country of Origin
| Origin Country | MFN Tariff | Surtaxes | Total Effective Rate |
|---|---|---|---|
| 🇨🇳China | Free | — | Free |
| 🇲🇽Mexico | Free | — | Free |
| 🇺🇸United States | Free | — | Free |
| 🇩🇪Germany | Free | — | Free |
| 🇯🇵Japan | Free | — | Free |
More Specific Codes
This product may fall under a more specific subheading:
Alternative Classifications
This product could be classified differently depending on its characteristics or intended use.
If the dissipation rate exceeds 1 W
Higher-power SiC transistors are classified under this subheading.
If imported as a part of a motor vehicle
Parts for motor vehicles are classified under heading 87.08, which may apply if the transistor is specifically for automotive electronics.
Not sure which classification is right?
The Tariff Assistant works through the GRI rules on your specific product to reach the right tariff item — and can price the duty on it in the same conversation.
Import Tips & Compliance
• Provide the datasheet showing the 225°C operating temperature and dissipation rate to confirm classification under 8541.21.00
• If the transistors are for automotive use, ensure they meet Canadian Motor Vehicle Safety Standards
• Consider the end-use application to determine if additional certifications are required
Related Products under Tariff item 8541.21.00
2N3904 NPN RF Transistor
The 2N3904 is a general-purpose NPN silicon transistor for RF amplification and switching, with an operating frequency exceeding 100 MHz and dissipation under 1W. It is a discrete, non-photosensitive transistor.
2N3904 NPN Switching Transistor
The 2N3904 is a low-power NPN bipolar junction transistor with a maximum power dissipation of 625 milliwatts, making it suitable for signal amplification and low-speed switching in audio circuits and hobbyist projects. As a non-photosensitive transistor with a dissipation rate below 1 watt, it falls under tariff item 8541.21.00.
2N7000 N-Channel MOSFET Transistor
The 2N7000 is an N-channel enhancement-mode MOSFET with a maximum power dissipation of 400 milliwatts, designed for low-power switching in logic level converters and battery circuits. As a non-photosensitive field-effect transistor with dissipation under 1 watt, it is classified under tariff item 8541.21.00.
2SC945 NPN Silicon RF Transistor
The 2SC945 NPN transistor is used in FM/AM radio IF amplifiers and oscillators, supporting frequencies above 100 MHz with dissipation below 1W. It is a discrete, low-power RF transistor.
Audio Output TIP42C PNP Complementary Transistor
The TIP42C PNP transistor is a complementary counterpart to the TIP31C, used in push-pull audio output stages for balanced Class AB amplifiers. When operated at under 1 W with proper heat sinking, it qualifies for classification under tariff item 8541.21.00. This product is suitable for professional audio applications requiring low-power operation.
Automotive Grade MOSFET Wafer
Unmounted MOSFET wafers qualified to AEC-Q101 for automotive electronic control units and sensors. Each die dissipates under 1 watt, placing these wafers in the low-power transistor category of the Customs Tariff.