Other
Semiconductor devices (for example, diodes, transistors, semiconductor-based transducers); photosensitive semiconductor devices, including photovoltaic cells whether or not assembled in modules or made up into panels; light-emitting diodes (LED), whether or not assembled with other light-emitting diodes (LED); mounted piezo-electric crystals. > Other semiconductor devices: > Other > Other > Other
Duty Rate (from China)
Products classified under Tariff item 8541.5
CMOS Image Sensor
A CMOS image sensor that converts light into digital electrical signals using an array of photodiodes and supporting circuitry on a semiconductor substrate. It is a semiconductor-based transducer because it detects physical phenomena (light) and converts them into electrical signals, and it is presented as a discrete component for use in cameras and other imaging devices.
8541.51.00Flow Sensor Silicon Chip
A thermal mass flow sensor chip that uses semiconductor-based heater and temperature-sensing elements to measure fluid flow by detecting heat dissipation. It is a semiconductor-based transducer because it converts a physical phenomenon (flow) into an electrical signal, and it is supplied as a bare die or packaged component for integration into medical or HVAC equipment.
8541.51.00Gas Sensor Semiconductor Chip
A metal-oxide-semiconductor (MOS) gas sensor chip that detects reducing or oxidizing gases by measuring changes in electrical conductivity of a semiconductor film. It is a semiconductor-based transducer because it converts a chemical phenomenon (gas concentration) into an electrical signal, and it is sold as a discrete component for air quality monitors and industrial safety devices.
8541.51.00Hall Effect Sensor
A Hall effect sensor that uses a semiconductor plate to generate a voltage proportional to an applied magnetic field, converting magnetic field strength into an electrical signal. It is a semiconductor-based transducer because it detects a physical phenomenon (magnetic field) and outputs an electrical signal, and it is presented as a discrete component for position sensing in motors and keyboards.
8541.51.00Inclinometer MEMS Sensor
A MEMS inclinometer sensor that measures tilt angle using semiconductor-based accelerometers and gravity vector analysis, converting orientation into an electrical signal. It is a semiconductor-based transducer because it detects a physical phenomenon (orientation) and outputs an electrical signal, and it is supplied as a component for construction lasers and robotics.
8541.51.00MEMS Microphone
A MEMS microphone that converts sound waves into electrical signals using a semiconductor diaphragm and backplate, forming a capacitive transducer. It is a semiconductor-based transducer because it converts an acoustic phenomenon into an electrical signal, and it is supplied as a discrete component for audio devices.
8541.51.00Photovoltaic Transducer Cell
A single photovoltaic cell that converts light into electrical energy using a semiconductor p-n junction, functioning as a light-to-electricity transducer. It is a semiconductor-based transducer because it converts a physical phenomenon (light) into an electrical signal, and it is presented as a bare cell for use in sensors or small devices, not assembled into a panel.
8541.51.00Semiconductor Pressure Sensor
A piezoresistive pressure sensor that uses a silicon diaphragm with embedded resistors to transduce pressure into electrical resistance changes. It is a semiconductor-based transducer because it converts a physical phenomenon (pressure) into an electrical signal, and it is supplied as a discrete component for automotive, medical, and industrial applications.
8541.51.00Semiconductor Temperature Sensor IC
A semiconductor temperature sensor IC that uses the forward voltage variation of a p-n junction to transduce temperature into an electrical signal. It is a semiconductor-based transducer because it converts a physical phenomenon (temperature) into an electrical signal, and it is supplied as a discrete component for processors, HVAC, and medical devices.
8541.51.00Silicon Accelerometer Sensor
A MEMS accelerometer that uses semiconductor capacitive plates to transduce acceleration into electrical signals by measuring changes in capacitance. It is a semiconductor-based transducer because it converts a physical phenomenon (acceleration) into an electrical signal, and it is supplied as a discrete component for smartphones, drones, and automotive applications.
8541.59.001N4007 Rectifier Diode
The 1N4007 is a standard silicon rectifier diode used to convert alternating current (AC) to direct current (DC) in power supplies and general rectification circuits. It is a semiconductor device that does not fall under the photosensitive or LED categories, so it is classified as 'other semiconductor devices' under this tariff item.
8541.59.001N5819 Schottky Diode
The 1N5819 is a Schottky barrier diode known for its fast switching and low forward voltage drop, making it ideal for power rectification in switch-mode power supplies and solar inverters. As a non-photosensitive semiconductor device, it falls under this tariff item for 'other semiconductor devices'.
8541.59.002N2222 NPN Transistor
The 2N2222 is a general-purpose NPN bipolar junction transistor used for switching and amplification in electronic circuits. It is a semiconductor device that is not photosensitive, so it is classified under this tariff item as 'other semiconductor devices'.
8541.59.008-Inch Silicon CMOS Sensor Wafer
The 8-inch silicon CMOS sensor wafer contains unseparated CMOS image sensor chips for industrial machine vision cameras, with 12MP resolution per die. As a photosensitive semiconductor device, it is classified under this tariff item for 'other semiconductor devices'.
8541.59.00BC547 NPN General Purpose Transistor
The BC547 is a low-power NPN silicon transistor used for signal amplification and switching in low-voltage circuits, commonly found in consumer electronics like radios and sensors. As a non-photosensitive semiconductor device, it falls under this tariff item for 'other semiconductor devices'.
8541.59.00Bridge Rectifier GBU4J
The GBU4J is a single-phase bridge rectifier containing four discrete diodes in one package, used in power supply secondary circuits. It is a semiconductor device that is not photosensitive, so it is classified under this tariff item as 'other semiconductor devices'.
8541.59.00Darlington Transistor Pair TIP120
The TIP120 is an NPN Darlington transistor that provides high current gain for driving relays and motors, with two transistors in a monolithic package. As a non-photosensitive semiconductor device, it falls under this tariff item for 'other semiconductor devices'.
8541.59.00Darlington Transistor TIP120
The TIP120 Darlington transistor pairs multiple bipolar junction transistors for high current gain in relay drivers and stepper motors. It is classified under tariff item 8541.59.00 as an other semiconductor device, providing hFE greater than 1000 in a single package.
8541.59.00GaAs HBT MMIC Wafer
The GaAs HBT MMIC wafer is a 100mm gallium arsenide wafer with heterojunction bipolar transistor monolithic microwave integrated circuit chips for satellite communications, operating at 2-18 GHz. It is a semiconductor device that is not photosensitive, so it falls under this tariff item for 'other semiconductor devices'.
8541.59.00Gallium Nitride RF Transistor Die
The gallium nitride RF transistor die consists of unmounted GaN high-electron-mobility transistor (HEMT) dice on 4-inch wafers for 5G base stations and radar systems, featuring 50V breakdown voltage. It is a semiconductor device that is not photosensitive, so it is classified under this tariff item for 'other semiconductor devices'.
8541.59.00Germanium Diode 1N34A
The 1N34A is a germanium point-contact diode used for RF detection and crystal radio receivers, with a low forward voltage drop. It is a semiconductor device that is not photosensitive, so it is classified under this tariff item as 'other semiconductor devices'.
8541.59.00Hall Effect Sensor A3144
The A3144 is a semiconductor-based Hall effect sensor that detects magnetic fields for position sensing in automotive and industrial applications. It qualifies under tariff item 8541.59.00 as a semiconductor-based transducer, converting magnetic field strength into an electrical signal.
8541.59.00Hall Effect Sensor IC (A3144)
The A3144 is a Hall effect sensor IC that detects magnetic fields for position sensing in motors and automotive applications. It is a semiconductor-based transducer that is not photosensitive, so it falls under this tariff item for 'other semiconductor devices'.
8541.59.00IGBT Module PS21672
The PS21672 is an insulated gate bipolar transistor (IGBT) power module for high-voltage applications like EV inverters and industrial drives. Classified under tariff item 8541.59.00 as an other semiconductor device, it combines MOSFET and bipolar transistor technologies for efficient high-power switching.
8541.59.00IGBT Silicon Die on Wafer
A 200mm silicon wafer containing unmounted insulated-gate bipolar transistor (IGBT) chips rated 1200V/200A, used in industrial motor drives and uninterruptible power supplies. The wafer is classified as an unmounted semiconductor device under tariff item 8541.59.00, as the individual dice have not yet been separated or packaged.
8541.59.00Laser Diode Driver IC
A semiconductor integrated circuit specifically controlling laser diode current modulation for fiber optics. Classified under tariff item 8541.59.00 as a specialized semiconductor device for optical transmission, it enables high-speed operation in optical communication systems.
8541.59.00MEMS Pressure Sensor Wafer
A 200mm silicon wafer with unmounted micro-electro-mechanical systems (MEMS) capacitive pressure sensor dice for automotive tire pressure monitoring systems. Classified under tariff item 8541.59.00 as semiconductor-based transducers, the wafer contains sensors that convert pressure into electrical signals.
8541.59.00N-Channel MOSFET IRF540N
The IRF540N is an N-channel enhancement-mode power MOSFET semiconductor device used for switching and amplification in motor drives and inverters. Classified under tariff item 8541.59.00 as an other semiconductor device, it features low on-resistance and fast switching.
8541.59.00Optocoupler PC817
The PC817 optocoupler combines an infrared LED with a phototransistor for electrical isolation in digital circuits. While containing an LED, it is classified under tariff item 8541.59.00 as a semiconductor device emphasizing its isolation function.
8541.59.00PIN Photodiode BPW34
The BPW34 PIN photodiode is a semiconductor device for light detection in barcode scanners and optical communication. Classified under tariff item 8541.59.00 as a general semiconductor device, it features fast response time and high sensitivity.
8541.59.00Power SiC Diode Wafer
A 150mm silicon carbide wafer with merged p-n Schottky diode chips rated 1700V/50A for photovoltaic inverters and traction systems. The wafer is classified under tariff item 8541.59.00 as an unmounted semiconductor device, with the ultra-low reverse recovery enabling high switching efficiency.
8541.59.00RF Schottky Diode BAT54
The BAT54 is a dual RF Schottky diode for mixer circuits and detectors in wireless communication devices. Classified under tariff item 8541.59.00 as an other semiconductor device optimized for high frequency, it features low capacitance enabling GHz operation.
8541.59.00Schottky Barrier Diode Wafer
A 150mm silicon wafer with unmounted Schottky diode chips for high-frequency power rectification in switch-mode power supplies, rated 600V/10A. The wafer is classified under tariff item 8541.59.00 as an unmounted semiconductor device, with low forward voltage drop enabling efficient operation.
8541.59.00SiC MOSFET Test Wafer
A 4-inch silicon carbide test wafer with process control monitor (PCM) structures and unmounted MOSFET dice for automotive traction inverters. Classified under tariff item 8541.59.00 as a semiconductor device wafer, it is used for yield testing and process validation rather than final product assembly.
8541.59.00Silicon Avalanche Diode 1N5919
The 1N5919 is a silicon avalanche diode designed for transient voltage suppression in telecom equipment and automotive electronics. It operates using avalanche breakdown to clamp voltage spikes, classifying it as an 'other' semiconductor device under tariff item 8541.59.00.
8541.59.00Silicon Carbide Power MOSFET Wafer
A 6-inch silicon carbide wafer containing unmounted chips designed for high-voltage power MOSFET transistors used in electric vehicles and renewable energy inverters. Classified under tariff item 8541.59.00 as an unmounted semiconductor device, the wafer enables high-efficiency power conversion.
8541.59.00Silicon Schottky Barrier Diode 1N5819
The 1N5819 is a Schottky barrier diode made from silicon, used for low-voltage rectification in power supplies and DC-DC converters. Its metal-semiconductor junction provides fast switching and low forward voltage drop, falling under 'other' semiconductor devices in tariff item 8541.59.00.
8541.59.00Temperature Sensor IC LM35
The LM35 is a precision analog temperature sensor integrated circuit that outputs a voltage linearly proportional to temperature (10mV/°C). It functions as a semiconductor-based transducer converting temperature into an electrical signal, classified under 'other' semiconductor devices in tariff item 8541.59.00.
8541.59.00Thyristor SCR BT151
The BT151 is a silicon-controlled rectifier (SCR) thyristor used for high-power switching in lighting dimmers and motor controls. As a four-layer semiconductor device with gate-controlled conduction, it is classified as an 'other' semiconductor device under tariff item 8541.59.00.
8541.59.00TIP41C NPN Power Transistor
The TIP41C is a medium-power NPN bipolar transistor rated at 100V and 6A, used in audio amplifiers and motor drivers. It is a semiconductor device that is not photosensitive, so it is classified under this tariff item as 'other semiconductor devices'.
8541.59.00TVS Diode P6KE6.8A
The P6KE6.8A is a transient voltage suppressor (TVS) diode that protects circuits from ESD and surges, with bidirectional 6.8V clamping. It is a semiconductor device that is not photosensitive, so it falls under this tariff item for 'other semiconductor devices'.
8541.59.00Varactor Diode BB131
The BB131 is a varactor diode whose capacitance varies with reverse voltage, used in voltage-controlled oscillators (VCOs) and tuners. Its voltage-variable capacitance function makes it an 'other' semiconductor device under tariff item 8541.59.00.
8541.59.00Varactor Diode BB135
The BB135 is a silicon varactor (varicap) diode used for voltage-controlled tuning in VCOs and RF circuits, with capacitance varying from 4-20pF with reverse bias voltage. It is a semiconductor device that is not photosensitive, so it is classified under this tariff item as 'other semiconductor devices'.
8541.59.00VCSEL Array Wafer
A 6-inch GaAs wafer containing vertical-cavity surface-emitting laser diode arrays with 940nm wavelength for 3D facial recognition in smartphones. Classified under tariff item 8541.59.00 as unmounted light-emitting diodes, the wafer contains LED structures that convert electrical energy into infrared light.
8541.59.00Zener Diode 1N4733A
The 1N4733A is a 5.1V Zener diode used for voltage regulation in power supplies and protection circuits. It maintains a constant voltage through reverse breakdown, classifying it as an 'other' semiconductor device under tariff item 8541.59.00.
8541.59.00Zener Diode 5.1V 1W
The 5.1V 1W Zener diode is used for voltage regulation and reference circuits in power supplies, providing a stable reference voltage through reverse breakdown. It is a semiconductor device that is not photosensitive, so it falls under this tariff item for 'other semiconductor devices'.