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IGBT Silicon Die on Wafer

A 200mm silicon wafer containing unmounted insulated-gate bipolar transistor (IGBT) chips rated 1200V/200A, used in industrial motor drives and uninterruptible power supplies. The wafer is classified as an unmounted semiconductor device under tariff item 8541.59.00, as the individual dice have not yet been separated or packaged.

Import Duty Rates by Country of Origin

Origin CountryMFN TariffSurtaxesTotal Effective Rate
πŸ‡¨πŸ‡³ChinaFreeβ€”Free
πŸ‡²πŸ‡½MexicoFreeβ€”Free
πŸ‡ΊπŸ‡ΈUnited StatesFreeβ€”Free
πŸ‡©πŸ‡ͺGermanyFreeβ€”Free
πŸ‡―πŸ‡΅JapanFreeβ€”Free

More Specific Codes

This product may fall under a more specific subheading:

Alternative Classifications

This product could be classified differently depending on its characteristics or intended use.

8541.21.00Same rate: Free

If the dice are separated and packaged as individual transistors

Separated and packaged IGBTs fall under the specific subheading for transistors with a dissipation capacity of less than 1 W.

8541.29.00Same rate: Free

If the dice are separated and packaged as individual transistors with a dissipation capacity of 1 W or more

Higher-power packaged transistors are classified under this subheading for other transistors.

8542.31.00Same rate: Free

If the wafer is processed into a monolithic integrated circuit

Wafers containing integrated circuits rather than discrete semiconductor devices fall under heading 85.42.

Not sure which classification is right?

The Tariff Assistant works through the GRI rules on your specific product to reach the right tariff item β€” and can price the duty on it in the same conversation.

Import Tips & Compliance

β€’ Ensure the wafer is declared as an unmounted semiconductor device, not as a finished transistor, to avoid misclassification

β€’ Provide a detailed product specification sheet to the CBSA officer if requested

β€’ Verify whether the wafer qualifies for duty-free treatment under a free trade agreement applicable to your country of origin

Related Products under Tariff item 8541.59.00

1N4007 Rectifier Diode

The 1N4007 is a standard silicon rectifier diode used to convert alternating current (AC) to direct current (DC) in power supplies and general rectification circuits. It is a semiconductor device that does not fall under the photosensitive or LED categories, so it is classified as 'other semiconductor devices' under this tariff item.

1N5819 Schottky Diode

The 1N5819 is a Schottky barrier diode known for its fast switching and low forward voltage drop, making it ideal for power rectification in switch-mode power supplies and solar inverters. As a non-photosensitive semiconductor device, it falls under this tariff item for 'other semiconductor devices'.

2N2222 NPN Transistor

The 2N2222 is a general-purpose NPN bipolar junction transistor used for switching and amplification in electronic circuits. It is a semiconductor device that is not photosensitive, so it is classified under this tariff item as 'other semiconductor devices'.

8-Inch Silicon CMOS Sensor Wafer

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BC547 NPN General Purpose Transistor

The BC547 is a low-power NPN silicon transistor used for signal amplification and switching in low-voltage circuits, commonly found in consumer electronics like radios and sensors. As a non-photosensitive semiconductor device, it falls under this tariff item for 'other semiconductor devices'.

Bridge Rectifier GBU4J

The GBU4J is a single-phase bridge rectifier containing four discrete diodes in one package, used in power supply secondary circuits. It is a semiconductor device that is not photosensitive, so it is classified under this tariff item as 'other semiconductor devices'.