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200mm Silicon Rectifier Diode Wafer

A 200mm diameter silicon epitaxial wafer containing p-n junction arrays for high-voltage rectifier diodes, used in automotive alternators and industrial power supplies. The wafer is optimized for forward voltage drop and surge current performance. As an unmounted semiconductor device in wafer form, it is classified as a diode other than photosensitive or light-emitting.

Import Duty Rates by Country of Origin

Origin CountryMFN TariffSurtaxesTotal Effective Rate
πŸ‡¨πŸ‡³ChinaFreeβ€”Free
πŸ‡²πŸ‡½MexicoFreeβ€”Free
πŸ‡ΊπŸ‡ΈUnited StatesFreeβ€”Free
πŸ‡©πŸ‡ͺGermanyFreeβ€”Free
πŸ‡―πŸ‡΅JapanFreeβ€”Free

More Specific Codes

This product may fall under a more specific subheading:

Alternative Classifications

This product could be classified differently depending on its characteristics or intended use.

8541.21.00Same rate: Free

If the wafer is diced into individual transistor chips

Diced transistor chips would be classified as transistors rather than diodes.

8542.31.00Same rate: Free

If the wafer contains integrated circuits rather than discrete diode structures

Wafers with monolithic integrated circuits fall under electronic integrated circuits.

8541.90.00Same rate: Free

If the wafer includes additional elements beyond the diode junctions

Parts of semiconductor devices are classified separately when not meeting the definition of complete devices.

Not sure which classification is right?

The Tariff Assistant works through the GRI rules on your specific product to reach the right tariff item β€” and can price the duty on it in the same conversation.

Import Tips & Compliance

β€’ Ensure the wafer is declared as an unmounted semiconductor device, not as a finished diode, to avoid misclassification

β€’ Provide a detailed product specification sheet to the CBSA officer if requested

β€’ Verify whether the wafer qualifies for duty-free treatment under a free trade agreement

Related Products under Tariff item 8541.10.00

1N4007 Rectifier Diode

The 1N4007 is a standard silicon rectifier diode designed for general-purpose rectification in power supplies and chargers. It allows current to flow in one direction only, blocking reverse voltage up to 1000V, making it a classic non-photosensitive, non-LED diode.

1N4148 Switching Diode

The 1N4148 is a high-speed silicon switching diode used in signal processing, protection circuits, and high-frequency applications. It features fast switching times under 4ns, fitting tariff item 8541.10.00 as a non-photosensitive, non-LED diode.

1N4728A 3.3V Zener Diode

The 1N4728A is a 3.3V Zener diode commonly used in low-voltage reference and protection circuits for microcontrollers and sensors. It operates through the Zener breakdown mechanism, distinguishing it from other diode types. As a discrete, non-photosensitive, non-LED diode, it is classified under this tariff item.

1N4733A 5.1V Zener Diode

The 1N4733A is a 5.1V axial-lead silicon Zener diode designed for voltage regulation in electronic circuits. It operates through the Zener breakdown mechanism, making it a specific type of non-photosensitive, non-LED diode. This discrete semiconductor device is classified under this tariff item.

1N5226B 3.3V Zener Diode

1N5226B is a 3.3V 500mW Zener diode with 5% tolerance for precision voltage regulation in digital logic circuits. It operates through the Zener breakdown mechanism, classifying it as a non-photosensitive, non-LED diode. This discrete semiconductor device is classified under this tariff item.

1N751 5.6V Zener Diode

The 1N751 is a 5.6V, 400mW Zener diode ideal for stabilizing voltages in analog circuits and instrumentation. It operates through the Zener breakdown mechanism, classifying it as a non-photosensitive, non-LED diode. This discrete semiconductor device is classified under this tariff item.