GaAs Microwave Gunn Diode
The GaAs microwave Gunn diode is a Gallium Arsenide diode that operates as an oscillator for 24 GHz automotive radar and motion sensors, generating continuous wave power up to 50 mW. As a transferred electron effect microwave diode, it is classified under tariff item 8541.10.00 as a non-photosensitive, non-LED diode.
Import Duty Rates by Country of Origin
| Origin Country | MFN Tariff | Surtaxes | Total Effective Rate |
|---|---|---|---|
| 🇨🇳China | Free | — | Free |
| 🇲🇽Mexico | Free | — | Free |
| 🇺🇸United States | Free | — | Free |
| 🇩🇪Germany | Free | — | Free |
| 🇯🇵Japan | Free | — | Free |
More Specific Codes
This product may fall under a more specific subheading:
Alternative Classifications
This product could be classified differently depending on its characteristics or intended use.
If the diode is part of a monolithic microwave integrated circuit
MMICs are classified under heading 8542.
If the diode is sold as part of a radar apparatus
Radar apparatus are classified under heading 8526.
Not sure which classification is right?
The Tariff Assistant works through the GRI rules on your specific product to reach the right tariff item — and can price the duty on it in the same conversation.
Import Tips & Compliance
• Declare GaAs Gunn diodes under 8541.10.00 and include the operating frequency and power output in the product documentation
• Verify whether the diodes are subject to any export controls from the country of origin, as this may affect import documentation
• Ensure the commercial invoice clearly describes the diode as a semiconductor device
Related Products under Tariff item 8541.10.00
1N4007 Rectifier Diode
The 1N4007 is a standard silicon rectifier diode designed for general-purpose rectification in power supplies and chargers. It allows current to flow in one direction only, blocking reverse voltage up to 1000V, making it a classic non-photosensitive, non-LED diode.
1N4148 Switching Diode
The 1N4148 is a high-speed silicon switching diode used in signal processing, protection circuits, and high-frequency applications. It features fast switching times under 4ns, fitting tariff item 8541.10.00 as a non-photosensitive, non-LED diode.
1N4728A 3.3V Zener Diode
The 1N4728A is a 3.3V Zener diode commonly used in low-voltage reference and protection circuits for microcontrollers and sensors. It operates through the Zener breakdown mechanism, distinguishing it from other diode types. As a discrete, non-photosensitive, non-LED diode, it is classified under this tariff item.
1N4733A 5.1V Zener Diode
The 1N4733A is a 5.1V axial-lead silicon Zener diode designed for voltage regulation in electronic circuits. It operates through the Zener breakdown mechanism, making it a specific type of non-photosensitive, non-LED diode. This discrete semiconductor device is classified under this tariff item.
1N5226B 3.3V Zener Diode
1N5226B is a 3.3V 500mW Zener diode with 5% tolerance for precision voltage regulation in digital logic circuits. It operates through the Zener breakdown mechanism, classifying it as a non-photosensitive, non-LED diode. This discrete semiconductor device is classified under this tariff item.
1N751 5.6V Zener Diode
The 1N751 is a 5.6V, 400mW Zener diode ideal for stabilizing voltages in analog circuits and instrumentation. It operates through the Zener breakdown mechanism, classifying it as a non-photosensitive, non-LED diode. This discrete semiconductor device is classified under this tariff item.