Microwave Tunnel Diode
The microwave tunnel diode, also known as an Esaki diode, is used for ultra-fast microwave detectors and oscillators in instrumentation, leveraging quantum tunneling negative resistance at Ka-band frequencies. It is classified under tariff item 8541.10.00 as a non-photosensitive, non-LED semiconductor diode.
Import Duty Rates by Country of Origin
| Origin Country | MFN Tariff | Surtaxes | Total Effective Rate |
|---|---|---|---|
| 🇨🇳China | Free | — | Free |
| 🇲🇽Mexico | Free | — | Free |
| 🇺🇸United States | Free | — | Free |
| 🇩🇪Germany | Free | — | Free |
| 🇯🇵Japan | Free | — | Free |
More Specific Codes
This product may fall under a more specific subheading:
Alternative Classifications
This product could be classified differently depending on its characteristics or intended use.
If the diode is part of an integrated circuit
Integrated circuits are classified under heading 8542.
If the diode is a part of testing or measuring instruments
Parts of instruments for measuring electrical quantities are classified under heading 9030.
Not sure which classification is right?
The Tariff Assistant works through the GRI rules on your specific product to reach the right tariff item — and can price the duty on it in the same conversation.
Import Tips & Compliance
• Declare microwave tunnel diodes under 8541.10.00 and include the peak current and frequency range in the technical documentation
• Since these are legacy components, ensure the supplier provides full specifications to support classification
• Consider whether the diodes are for research or commercial use, as this may affect import procedures
Related Products under Tariff item 8541.10.00
1N4007 Rectifier Diode
The 1N4007 is a standard silicon rectifier diode designed for general-purpose rectification in power supplies and chargers. It allows current to flow in one direction only, blocking reverse voltage up to 1000V, making it a classic non-photosensitive, non-LED diode.
1N4148 Switching Diode
The 1N4148 is a high-speed silicon switching diode used in signal processing, protection circuits, and high-frequency applications. It features fast switching times under 4ns, fitting tariff item 8541.10.00 as a non-photosensitive, non-LED diode.
1N4728A 3.3V Zener Diode
The 1N4728A is a 3.3V Zener diode commonly used in low-voltage reference and protection circuits for microcontrollers and sensors. It operates through the Zener breakdown mechanism, distinguishing it from other diode types. As a discrete, non-photosensitive, non-LED diode, it is classified under this tariff item.
1N4733A 5.1V Zener Diode
The 1N4733A is a 5.1V axial-lead silicon Zener diode designed for voltage regulation in electronic circuits. It operates through the Zener breakdown mechanism, making it a specific type of non-photosensitive, non-LED diode. This discrete semiconductor device is classified under this tariff item.
1N5226B 3.3V Zener Diode
1N5226B is a 3.3V 500mW Zener diode with 5% tolerance for precision voltage regulation in digital logic circuits. It operates through the Zener breakdown mechanism, classifying it as a non-photosensitive, non-LED diode. This discrete semiconductor device is classified under this tariff item.
1N751 5.6V Zener Diode
The 1N751 is a 5.6V, 400mW Zener diode ideal for stabilizing voltages in analog circuits and instrumentation. It operates through the Zener breakdown mechanism, classifying it as a non-photosensitive, non-LED diode. This discrete semiconductor device is classified under this tariff item.