LDMOS RF Power Transistor Wafer
Laterally Diffused Metal Oxide Semiconductor wafer for broadcast transmitters. Unmounted under HTS 8541.29.00.40. High power RF amplification capability.
Import Duty Rates by Country of Origin
Alternative Classifications
This product could be classified differently depending on its characteristics or intended use.
If for transmission apparatus components
RF power amps in broadcast equipment under 8525.
Not sure which classification is right?
Our AI classifier can analyze your specific product and recommend the correct HTS code with confidence.
Import Tips & Compliance
• Specify output power (100-1000W) and frequency band
Related Products under HTS 8541.29.00.40
Darlington Transistor Wafer Array
Silicon wafer with Darlington paired transistor arrays for high gain switching. HTS 8541.29.00.40.
RF Silicon Wafer with Multiple Transistor Types
Multi-project silicon wafer containing various RF transistor test structures. Unmounted under HTS 8541.29.00.40.
Silicon Carbide JFET Wafer
SiC Junction Field Effect Transistor wafer for high-temperature sensing. HTS 8541.29.00.40 classification. Extreme environment operation.
BiCMOS Transistor Wafer
Bipolar CMOS mixed-signal transistor wafer for analog-digital interfaces. Unmounted chips HTS 8541.29.00.40.
SOI MOSFET Transistor Wafer
Silicon-On-Insulator MOSFET wafer for radiation-hardened electronics. HTS 8541.29.00.40 unmounted.
Silicon NPN Power Transistor Wafer
Unmounted silicon wafer containing thousands of NPN bipolar junction transistor dice, used in power amplification circuits for automotive and industrial applications. Classified under HTS 8541.29.00.40 as unmounted chips, dice, and wafers of transistors other than photosensitive types. These are raw semiconductor substrates prior to dicing and packaging.